| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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127 pcs
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127 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MJE3055T is a general-purpose NPN power transistor manufactured with an epitaxial base process and housed in a hermetically sealed metal TO-220 package. It is designed for general-purpose switching and amplifier applications, particularly in high-power scenarios.
Key electrical specifications include a maximum DC current gain (hFE) of 100, a continuous collector current (IC) of 10A, and a maximum collector-base voltage (VCB) of 70V. The device offers a collector dissipation of 75W and a transition frequency of 2MHz. The operating junction temperature can reach a maximum of 175°C, with an operating and storage range of -55 to +150°C.
This transistor is suitable for various applications such as power switching circuits, amplifier circuits, PWM applications, regulator circuits, and switch-mode power supplies. Its pin configuration consists of Base, Collector, and Emitter. Equivalents include 2N6673, 2N3055, TIP122, and 2N6675.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
TO-220.
-55°C to +150°C.
10 A.
75 W.
100 maximum.
2 MHz.
70 V.