MJE3055T The MJE3055T is an NPN bipolar junction transistor from STMicroelectronics designed for general-purpose amplifier and switching applications. It offers a 60V collector-emitter voltage and 10A collector current.
Mfr Part #:

MJE3055T

Available from 4 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The MJE3055T is an NPN bipolar junction transistor from STMicroelectronics designed for general-purpose amplifier and switching applications. It offers a 60V collector-emitter voltage and 10A collector current.
Total Stock: 4,235 pcs
$ Price Range: $0.99

MJE3055T Available from 4 distributors

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MJE3055T Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Package / Case
Power
Standard Package Qty
Supplier Device Package
Thermal Resistance - Junction to Case
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MJE3055T Description

Short technical summary and product information.

The MJE3055T is a complementary silicon plastic power transistor manufactured by STMicroelectronics. It is designed for general-purpose amplifier and switching applications. This NPN transistor features a maximum collector-emitter voltage of 60V and a continuous collector current of 10A.

 

With a power dissipation rating of 75W at 25°C case temperature, the MJE3055T is suitable for moderate power applications. It operates within a junction temperature range of -55°C to +150°C. The transistor is housed in a TO-220 package and is designed for through-hole mounting.

 

Key electrical characteristics include a minimum DC current gain (hFE) of 20 at 4A and 4V, and a maximum collector-emitter saturation voltage (Vce(sat)) of 8V at 10A and 3.3A base current. The gain-bandwidth product (fT) is 2MHz.

 

This device is RoHS3 compliant and is supplied in a TO-220 package, typically shipped in rails.

MJE3055T Quick Information

Product Type: NPN Transistor
Canonical Name: MJE3055T NPN Power Transistor
Subcategory: Single

MJE3055T Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

MJE3055T Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJE3055T Features

  • NPN silicon power transistor
  • 60V collector-emitter voltage rating
  • 10A continuous collector current
  • 75W power dissipation
  • TO-220 package for through-hole mounting

MJE3055T Applications

  • General-purpose amplifier circuits
  • Switching applications
  • Power supply circuits
  • Audio amplifiers

MJE3055T FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MJE3055T?

The maximum collector-emitter voltage (VCEO) for the MJE3055T is 60 Vdc.

What is the maximum continuous collector current of the MJE3055T?

The MJE3055T can handle a maximum continuous collector current (IC) of 10 Adc.

What is the power dissipation rating of the MJE3055T?

The MJE3055T has a power dissipation (PD) rating of 75 W at a case temperature of 25°C.

What is the operating temperature range for the MJE3055T?

The MJE3055T can operate within a junction temperature range of -55°C to +150°C.

What package type is the MJE3055T supplied in?

The MJE3055T is supplied in a TO-220 package.

How is the MJE3055T mounted?

The MJE3055T is designed for through-hole mounting.

What is the minimum DC current gain (hFE) for the MJE3055T?

The minimum DC current gain (hFE) for the MJE3055T is 20, measured at an IC of 4.0 Adc and VCE of 4.0 Vdc.

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