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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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150 pcs
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150 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Current-Gain - Bandwidth Product | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Supplier Package | |
| Thermal Resistance - Junction to Case | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| voltage (Minimum @ IC = 200 mAdc, IB = 0) |
The MJE2955T is a complementary silicon plastic power transistor manufactured by ON Semiconductor. It is designed for general-purpose amplifier and switching applications. This PNP transistor offers a collector-emitter voltage of up to 60V and a continuous collector current of 10A.
With a total power dissipation of 75W at 25°C case temperature, the MJE2955T is suitable for moderate power applications. It operates within a junction temperature range of -55°C to +150°C. The transistor is housed in a TO-220 package and is designed for through-hole mounting.
Key electrical characteristics include a minimum DC current gain (hFE) of 20 at 4A and 4V, and a maximum collector-emitter saturation voltage (Vce(sat)) of 8V at 3.3A and 10A. The gain-bandwidth product (fT) is 2.0 MHz.
This device is RoHS compliant and suitable for applications requiring a robust PNP power transistor. Its complementary NPN counterpart is the MJE3055T.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 60 Vdc.
The continuous collector current rating is 10 Adc.
The maximum power dissipation is 75 W.
The operating temperature range is -55°C to +150°C.
The package type is TO-220-3.
Yes, the MJE2955T is RoHS3 Compliant.