MJE2955T The MJE2955T is a PNP bipolar junction transistor from ON Semiconductor designed for general-purpose amplifier and switching applications. It features a 60V collector-emitter voltage and 10A collector current.
Mfr Part #:

MJE2955T

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MJE2955T is a PNP bipolar junction transistor from ON Semiconductor designed for general-purpose amplifier and switching applications. It features a 60V collector-emitter voltage and 10A collector current.
Total Stock: 150 pcs
$ Price Range: $0.99

MJE2955T Available from 1 distributor

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MJE2955T Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Current-Gain - Bandwidth Product
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Supplier Package
Thermal Resistance - Junction to Case
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
voltage (Minimum @ IC = 200 mAdc, IB = 0)

MJE2955T Description

Short technical summary and product information.

The MJE2955T is a complementary silicon plastic power transistor manufactured by ON Semiconductor. It is designed for general-purpose amplifier and switching applications. This PNP transistor offers a collector-emitter voltage of up to 60V and a continuous collector current of 10A.

 

With a total power dissipation of 75W at 25°C case temperature, the MJE2955T is suitable for moderate power applications. It operates within a junction temperature range of -55°C to +150°C. The transistor is housed in a TO-220 package and is designed for through-hole mounting.

 

Key electrical characteristics include a minimum DC current gain (hFE) of 20 at 4A and 4V, and a maximum collector-emitter saturation voltage (Vce(sat)) of 8V at 3.3A and 10A. The gain-bandwidth product (fT) is 2.0 MHz.

 

This device is RoHS compliant and suitable for applications requiring a robust PNP power transistor. Its complementary NPN counterpart is the MJE3055T.

MJE2955T Quick Information

Product Type: PNP Transistor
Canonical Name: MJE2955T PNP Power Transistor
Subcategory: Single

MJE2955T Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

MJE2955T Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJE2955T Features

  • PNP silicon power transistor.
  • 60V collector-emitter voltage rating.
  • 10A continuous collector current.
  • 75W total power dissipation.
  • TO-220 package for through-hole mounting.

MJE2955T Applications

  • General-purpose amplifier circuits.
  • General-purpose switching applications.
  • Power supply regulation circuits.
  • Audio amplifier stages.

MJE2955T FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MJE2955T?

The maximum collector-emitter voltage is 60 Vdc.

What is the continuous collector current rating?

The continuous collector current rating is 10 Adc.

What is the maximum power dissipation at 25°C?

The maximum power dissipation is 75 W.

What is the operating temperature range?

The operating temperature range is -55°C to +150°C.

What is the package type for the MJE2955T?

The package type is TO-220-3.

Is the MJE2955T RoHS compliant?

Yes, the MJE2955T is RoHS3 Compliant.

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