MJE2955T The STMicroelectronics MJE2955T is a PNP bipolar junction transistor designed for general-purpose amplifier and switching applications. It features a 60V collector-emitter voltage and 10A collector current.
Mfr Part #:

MJE2955T

Available from 5 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics MJE2955T is a PNP bipolar junction transistor designed for general-purpose amplifier and switching applications. It features a 60V collector-emitter voltage and 10A collector current.
✓ Total Stock: 12,878 pcs
$ Price Range: $0.99

MJE2955T Available from 5 distributors

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✓ Non-Authorised

MJE2955T Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MJE2955T Description

Short technical summary and product information.

The STMicroelectronics MJE2955T is a PNP silicon power transistor designed for general-purpose amplifier and switching applications. It offers a maximum collector-emitter voltage of 60V and a continuous collector current of 10A.

 

This transistor has a maximum power dissipation of 75W at 25°C case temperature and a high current gain-bandwidth product of 2MHz. The device is housed in a TO-220 package, suitable for through-hole mounting.

 

Key electrical characteristics include a minimum DC current gain (hFE) of 20 at 4A and 4V, and a maximum collector-emitter saturation voltage (Vce(sat)) of 8V at 10A and 3.3A base current. The operating temperature range is from -55°C to +150°C.

 

This component is Pb-free and RoHS compliant, making it suitable for modern electronic designs requiring environmentally conscious components.

MJE2955T Quick Information

Product Type: PNP Power Transistor
Canonical Name: MJE2955T PNP Power Transistor
Subcategory: Single

MJE2955T Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

MJE2955T Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJE2955T Features

  • PNP silicon power transistor.
  • 60V collector-emitter voltage rating.
  • 10A continuous collector current.
  • 75W maximum power dissipation.
  • TO-220 package for through-hole mounting.

MJE2955T Applications

  • Suitable for high-current switching applications.
  • Used in power amplifier circuits.
  • Ideal for general-purpose amplifier and switching.
  • Applicable in motor control and power regulation.
  • Suitable for high-temperature thermal environments.

MJE2955T FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MJE2955T?

The maximum collector-emitter voltage (VCEO) for the MJE2955T is 60 Vdc.

What is the maximum continuous collector current?

The MJE2955T can handle a maximum continuous collector current (IC) of 10 Adc.

What is the power dissipation of the MJE2955T at 25°C?

The total device dissipation (PD) for the MJE2955T is 75 W at a case temperature of 25°C.

What is the operating temperature range for this transistor?

The MJE2955T can operate within a junction and storage temperature range of -55°C to +150°C.

What is the minimum DC current gain (hFE) at 4A and 4V?

The minimum DC current gain (hFE) for the MJE2955T at 4A collector current and 4V collector-emitter voltage is 20.

What is the package type for the MJE2955T?

The MJE2955T is supplied in a TO-220-3 package.

Is the MJE2955T RoHS compliant?

Yes, the MJE2955T is RoHS3 compliant.

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