MJE270TG The ON Semiconductor MJE270TG is an NPN Darlington transistor designed for power applications. It offers a 100V collector-emitter breakdown voltage and a 2A continuous collector current.
Mfr Part #:

MJE270TG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MJE270TG is an NPN Darlington transistor designed for power applications. It offers a 100V collector-emitter breakdown voltage and a 2A continuous collector current.
Total Stock: 10,200 pcs
$ Price Range: $0.99

MJE270TG Available from 1 distributor

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MJE270TG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current
Collector Current - Peak
Collector Cutoff Current
Collector-Emitter Sustaining Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter Cutoff Current
Frequency
Mounting Type
Operating Temperature
PD (Nominal @ Ta = 25 °C)
PD (Nominal @ Tc=25ºC)
Power
Second Breakdown Collector Current
Supplier Device Package
Thermal Resistance - Junction to Case
Thermal Resistance Junction-to-Ambient
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
hFE (Minimum @ IC = 20 mAdc, VCE = 3.0 Vdc)

MJE270TG Description

Short technical summary and product information.

The ON Semiconductor MJE270TG is a complementary silicon power transistor featuring an NPN Darlington configuration. It is designed for high safe operating area and high DC current gain.

 

Key electrical specifications include a collector-emitter sustaining voltage (VCEO(sus)) of 100 Vdc, a continuous collector current (IC) of 2 Adc, and a peak collector current (ICM) of 4 Adc. The device offers a high DC current gain (hFE) of 1500 minimum at 120 mA and 10 V. Power dissipation is rated at 1.5 W at 25°C ambient temperature.

 

This transistor is housed in a TO-225AA, TO-126-3 package and is suitable for through-hole mounting. The operating and storage junction temperature range is -65°C to 150°C.

 

The MJE270TG is RoHS compliant and suitable for various power switching and amplification applications where a robust NPN Darlington transistor is required.

MJE270TG Quick Information

Product Type: NPN - Darlington Power Transistor
Canonical Name: MJE270TG NPN - Darlington Power Transistor
Subcategory: Single

MJE270TG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

MJE270TG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJE270TG Features

  • NPN Darlington power transistor.
  • 100V collector-emitter breakdown voltage.
  • 2A continuous collector current.
  • 1.5W maximum power dissipation.
  • TO-126 through-hole package.

MJE270TG Applications

  • Suitable for high-voltage switching applications.
  • Used in power amplifier circuits.
  • Ideal for motor control and driver circuits.
  • Applicable in audio amplification systems.
  • Employed in relay driver circuits.

MJE270TG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter sustaining voltage for the MJE270TG?

The collector-emitter sustaining voltage (VCEO(sus)) for the MJE270TG is a minimum of 100 Vdc.

What is the continuous collector current rating of the MJE270TG transistor?

The MJE270TG transistor has a continuous collector current (IC) rating of 2 Adc.

What is the maximum power dissipation for the MJE270TG at ambient temperature?

The maximum power dissipation (PD) for the MJE270TG at an ambient temperature of 25°C is 1.5 W.

What is the operating temperature range for the MJE270TG?

The operating and storage junction temperature range for the MJE270TG is -65°C to 150°C.

What package type is the MJE270TG supplied in?

The MJE270TG is supplied in a TO-225AA, TO-126-3 package.

Is the MJE270TG RoHS compliant?

The MJE270TG is RoHS3 Compliant.

What is the DC Current Gain (hFE) of the MJE270TG at 120mA and 10V?

The DC Current Gain (hFE) of the MJE270TG is a minimum of 1500 at 120mA collector current and 10V collector-emitter voltage.

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