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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
32,500 pcs
|
32500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
9,500 pcs
|
9500 pcs | On Request | 1 | On Request | On Request | 21+20+ | On Request | On Request | |
|
3,147 pcs
|
3147 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,520 pcs
|
1520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Current - Peak | |
| Collector-Emitter Sustaining Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Pb-Free | |
| Power | |
| Supplier Device Package | |
| Supplier Package | |
| Total Power Dissipation | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The ON Semiconductor MJE253G is a PNP bipolar junction transistor (BJT) designed for low power audio amplifier and low-current, high-speed switching applications. It features a high collector-emitter sustaining voltage of 100V and a continuous collector current rating of 4A.
This transistor is housed in a TO-126 package, suitable for through-hole mounting. It offers a DC current gain (hFE) of 40 minimum at 200mA and 1V, with a maximum collector-emitter saturation voltage of 600mV at 100mA and 1A. The gain bandwidth product is 40MHz.
With a power dissipation of 15W at 25°C case temperature, the MJE253G operates within a junction temperature range of -65°C to 150°C. It is Pb-Free and RoHS3 compliant, making it suitable for various electronic designs requiring a reliable PNP power transistor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MJE253G is 100V.
The MJE253G has a continuous collector current rating of 4A.
The MJE253G has a maximum power dissipation of 15W at 25°C case temperature.
The operating junction temperature range for the MJE253G is -65°C to 150°C.
The MJE253G is a PNP silicon bipolar junction transistor.
The MJE253G is supplied in a TO-126 package.