| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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119 pcs
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119 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MJE243 is a complementary silicon power transistor manufactured by On Semiconductor. This NPN device is designed for low power audio amplifier and low-current, high-speed switching applications.
Key electrical specifications include a collector-emitter voltage (VCEO) of 100V, a continuous collector current (IC) of 4A, and a peak collector current (ICM) of 8A. It offers a maximum power dissipation of 15W at 25°C case temperature and a DC current gain (hFE) ranging from 40 to 180 at 200mA and 1V.
The transistor features a high collector-emitter sustaining voltage and high DC current gain. Its annular construction contributes to low leakages. The device is available in a TO-225AA or TO-126 package, suitable for through-hole mounting.
This transistor is Pb-free and RoHS compliant, making it suitable for modern electronic designs requiring environmentally conscious components.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MJE243 is 100 Vdc.
The MJE243 has a continuous collector current (IC) rating of 4 Adc.
The total power dissipation for the MJE243 is 15 W at a case temperature of 25°C.
The operating and storage junction temperature range for the MJE243 is -65 to +150 °C.
The MJE243 is supplied in a TO-225AA or TO-126 package.
Yes, the MJE243 is RoHS3 compliant.