| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
400 pcs
|
400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
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| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The ON Semiconductor MJE210G is a PNP bipolar junction transistor (BJT) suitable for various electronic applications. It features a maximum collector-emitter voltage (VCEO) of 40V and a continuous collector current of 5A.
With a maximum power dissipation of 15W and a gain bandwidth product of 65MHz, this transistor is designed for moderate power switching and amplification tasks. The operating temperature range is from -65°C to 150°C.
This component is available in a Through Hole mounting style, specifically in a TO-126 package. Its specifications include a DC current gain (hFE) minimum of 45 at 2A and 1V, and a Vce saturation of 1.8V maximum at 1A, 5A.
The MJE210G is RoHS3 compliant, has an MSL of 1, and is REACH unaffected, making it suitable for a wide range of manufacturing processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MJE210G is 40V.
The MJE210G has a continuous collector current rating of 5A.
The maximum power dissipation for the MJE210G is 15W.
The MJE210G operates within a temperature range of -65°C to 150°C.
The MJE210G is supplied in a TO-126 package.
The MJE210G is mounted using the Through Hole method.