| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
214 pcs
|
214 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
30 pcs
|
30 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Supplier Device Package | |
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The MJE210 from ON Semiconductor is a single PNP bipolar junction transistor. It is designed for applications requiring a 40V collector-emitter voltage and can handle a continuous collector current of up to 5A, with a power dissipation of 15W.
This transistor features a DC current gain (hFE) of 45 at 2A and 1V, and a Vce saturation of 1.8V maximum at 1A and 5A. It operates within a temperature range of -65°C to 150°C (TJ).
The MJE210 is packaged in a TO-126 (TO-225AA, TO-126-3) case and utilizes through-hole mounting. Its frequency response extends to 65MHz.
This component is suitable for various switching and amplification tasks in electronic circuits where PNP characteristics are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MJE210 transistor has a maximum collector-emitter voltage of 40V.
The MJE210 can handle a continuous collector current of 5A.
The operating temperature range for the MJE210 is -65°C to 150°C (TJ).
The MJE210 is supplied in a TO-225AA, TO-126-3 package, specifically the TO-126 supplier package.
The MJE210 transistor is designed for through-hole mounting.