MJE200STU The MJE200STU is an NPN bipolar junction transistor from On Semiconductor. It features a 25V collector-emitter breakdown voltage and a maximum collector current of 5A.
Mfr Part #:

MJE200STU

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MJE200STU is an NPN bipolar junction transistor from On Semiconductor. It features a 25V collector-emitter breakdown voltage and a maximum collector current of 5A.
Total Stock: 3,120 pcs
$ Price Range: $0.99

MJE200STU Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,700 pcs
2700 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
420 pcs
420 pcs On Request 1 On Request On Request 19+ On Request On Request

MJE200STU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Current - Collector
Current - Collector Cutoff
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Frequency - Transition
Mounting Type
Operating Temperature
Power
Power - Max
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MJE200STU Description

Short technical summary and product information.

The MJE200STU is a single NPN bipolar junction transistor manufactured by On Semiconductor. This component is designed for various electronic applications requiring a robust transistor solution. It offers a collector-emitter breakdown voltage of 25V and can handle a continuous collector current of up to 5A, with a maximum power dissipation of 15W.

 

The transistor features a DC current gain (hFE) of at least 45 at 2A and 1V. Its transition frequency is rated at 65MHz, making it suitable for a range of signal processing tasks. The saturation voltage (Vce Sat) is a maximum of 1.8V at 1A and 5A.

 

Designed for through-hole mounting, the MJE200STU comes in a TO-225AA, TO-126-3 package, specifically utilizing the TO-126-3 supplier device package. The operating temperature range is up to 150°C (TJ). Compliance information indicates RoHS3 compliance, MSL 1, and REACH unaffected status, though these are unverified.

 

This transistor is a reliable choice for applications needing a general-purpose NPN transistor with moderate power handling capabilities.

MJE200STU Quick Information

Product Type: Bipolar Junction Transistor
Canonical Name: MJE200STU NPN Bipolar Junction Transistor
Subcategory: Single

MJE200STU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MJE200STU Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJE200STU Features

  • NPN bipolar junction transistor
  • 25V collector-emitter breakdown voltage
  • 5A maximum collector current
  • 15W maximum power dissipation
  • Through hole TO-126-3 package

MJE200STU Applications

  • Suitable for power switching applications
  • Used in general amplification circuits
  • Designed for moderate power handling
  • Through-hole mounting for easy assembly

MJE200STU FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MJE200STU?

The maximum collector-emitter breakdown voltage is 25V.

What is the maximum continuous collector current?

The maximum continuous collector current is 5A.

What is the power dissipation rating?

The maximum power dissipation is 15W.

What is the minimum DC current gain (hFE)?

The minimum DC current gain (hFE) is 45 at 2A and 1V.

What is the operating temperature range?

The operating temperature is up to 150°C (TJ).

What package type is the MJE200STU supplied in?

The MJE200STU is supplied in a TO-225AA, TO-126-3 package.

How is the MJE200STU mounted?

The MJE200STU is mounted using the through-hole method.

Home
Account

Categories