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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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400 pcs
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400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MJE200G is a bipolar junction transistor (BJT) manufactured by On Semiconductor. It is designed for switching and amplification applications requiring a maximum collector-emitter voltage of 40V and a collector current of 5A. The device is packaged in a TO126 package, suitable for through-hole mounting on printed circuit boards. Its specifications make it suitable for power regulation, motor control, and other high-current applications where reliable switching is needed.
The TO126 package provides good thermal dissipation and ease of mounting. The transistor's characteristics include high current handling capability and voltage ratings, making it appropriate for various industrial and consumer electronic circuits. Proper heat sinking is recommended to ensure optimal performance and longevity of the device.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage of the MJE200G is 40V.
The MJE200G is housed in a TO126 package.
The maximum collector current of the MJE200G is 5A.