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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,700 pcs
|
4700 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
460 pcs
|
460 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Current - Collector Cutoff (Max) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MJE182STU is a single NPN bipolar junction transistor (BJT) manufactured by On Semiconductor. This component is designed for general-purpose applications requiring a breakdown voltage of up to 80V and a continuous collector current of up to 3A.
Key electrical characteristics include a maximum Vce saturation of 1.7V at 600mA collector current and a minimum DC current gain (hFE) of 50 at 100mA and 1V. The transistor operates at a transition frequency of 50MHz and has a maximum power dissipation of 1.5W. The maximum collector cutoff current (ICBO) is 100nA.
This transistor is housed in a TO-225AA, TO-126-3 package, suitable for through-hole mounting. It has an operating temperature range up to 150°C (TJ).
Compliance information indicates RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status. The MJE182STU is a reliable choice for various electronic circuits requiring robust NPN transistor performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 80V.
The maximum continuous collector current is 3A.
The maximum power dissipation is 1.5W.
The operating temperature range is up to 150°C (TJ).
The MJE182STU is supplied in a TO-225AA, TO-126-3 package.
The MJE182STU is mounted using the Through Hole method.
The minimum DC current gain (hFE) is 50 at 100mA and 1V.