MJE182STU The MJE182STU is an NPN bipolar transistor from On Semiconductor. It features an 80V collector-emitter breakdown voltage and a maximum collector current of 3A.
Mfr Part #:

MJE182STU

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MJE182STU is an NPN bipolar transistor from On Semiconductor. It features an 80V collector-emitter breakdown voltage and a maximum collector current of 3A.
Total Stock: 5,160 pcs
$ Price Range: $0.99

MJE182STU Available from 2 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,700 pcs
4700 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
460 pcs
460 pcs On Request 1 On Request On Request 19+ On Request On Request

MJE182STU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MJE182STU Description

Short technical summary and product information.

The MJE182STU is a single NPN bipolar junction transistor (BJT) manufactured by On Semiconductor. This component is designed for general-purpose applications requiring a breakdown voltage of up to 80V and a continuous collector current of up to 3A.

 

Key electrical characteristics include a maximum Vce saturation of 1.7V at 600mA collector current and a minimum DC current gain (hFE) of 50 at 100mA and 1V. The transistor operates at a transition frequency of 50MHz and has a maximum power dissipation of 1.5W. The maximum collector cutoff current (ICBO) is 100nA.

 

This transistor is housed in a TO-225AA, TO-126-3 package, suitable for through-hole mounting. It has an operating temperature range up to 150°C (TJ).

 

Compliance information indicates RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status. The MJE182STU is a reliable choice for various electronic circuits requiring robust NPN transistor performance.

MJE182STU Quick Information

Product Type: NPN Bipolar Transistor
Canonical Name: MJE182STU NPN Bipolar Transistor
Subcategory: Single

MJE182STU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MJE182STU Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJE182STU Features

  • 80V collector-emitter breakdown voltage.
  • 3A maximum continuous collector current.
  • 1.5W maximum power dissipation.
  • 50 minimum DC current gain (hFE).
  • TO-126-3 package for through-hole mounting.

MJE182STU Applications

  • Suitable for general-purpose amplification.
  • Used in power switching circuits.
  • Applicable in voltage regulation.
  • Ideal for signal conditioning.

MJE182STU FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter breakdown voltage for the MJE182STU?

The maximum collector-emitter breakdown voltage is 80V.

What is the maximum continuous collector current for the MJE182STU?

The maximum continuous collector current is 3A.

What is the maximum power dissipation of the MJE182STU transistor?

The maximum power dissipation is 1.5W.

What is the operating temperature range for the MJE182STU?

The operating temperature range is up to 150°C (TJ).

What package type is the MJE182STU supplied in?

The MJE182STU is supplied in a TO-225AA, TO-126-3 package.

How is the MJE182STU transistor mounted?

The MJE182STU is mounted using the Through Hole method.

What is the minimum DC current gain (hFE) for the MJE182STU?

The minimum DC current gain (hFE) is 50 at 100mA and 1V.

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