MJE182G The ON Semiconductor MJE182G is an NPN bipolar junction transistor designed for low power audio amplifier and switching applications. It offers an 80V collector-emitter voltage and 3A continuous collector current.
Mfr Part #:

MJE182G

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MJE182G is an NPN bipolar junction transistor designed for low power audio amplifier and switching applications. It offers an 80V collector-emitter voltage and 3A continuous collector current.
Total Stock: 18,851 pcs
$ Price Range: $0.99

MJE182G Available from 4 distributors

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MJE182G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Current - Continuous - Maximum
Collector-Base Voltage (Maximum)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
DC Current Gain Hfe Min (Minimum)
Emitter-Base Voltage (Maximum)
Frequency
Maximum Operating Temperature
Maximum power dissipation
Minimum Operating Temperature
Mounting Type
Operating Temperature
Operating and Storage Junction Temperature Range
Power
Supplier Device Package
Total Power Dissipation (Maximum @ Tc=25 °C)
Total power dissipation (Maximum @ Ta=25 °C)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Vce Saturation Max (Maximum)
Voltage

MJE182G Description

Short technical summary and product information.

The MJE182G from ON Semiconductor is an NPN bipolar junction transistor (BJT) suitable for low power audio amplifier and high-speed switching applications. It features a maximum collector-emitter voltage (VCEO) of 80V and a continuous collector current (IC) of 3A.

 

Key electrical characteristics include a minimum DC current gain (hFE) of 50 at 100mA and 1V, and a maximum Vce saturation of 1.7V at 600mA and 3A. The transistor operates at frequencies up to 50MHz.

 

With a total power dissipation of 1.5W at 25°C ambient temperature, the MJE182G is housed in a TO-225AA, TO-126-3 package, designed for through-hole mounting. The operating temperature range is from -65°C to 150°C.

 

This device is RoHS 3 compliant and has a Moisture Sensitivity Level (MSL) of 1.

MJE182G Quick Information

Product Type: Bipolar Junction Transistor
Series: MJE182
Canonical Name: MJE182G NPN Bipolar Junction Transistor
Subcategory: BJT

MJE182G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MJE182G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJE182G Features

  • NPN bipolar junction transistor for switching.
  • 80V collector-emitter voltage rating.
  • 3A continuous collector current capability.
  • 50MHz gain-bandwidth product.
  • 1.5W power dissipation in TO-126 package.

MJE182G Applications

  • Suitable for high-speed switching applications.
  • Ideal for low power audio amplifier circuits.
  • Used in power regulation and control systems.
  • Applicable in motor driver and relay driver circuits.
  • Suitable for general-purpose switching in electronic devices.

MJE182G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MJE182G?

The maximum collector-emitter voltage (VCEO) for the MJE182G is 80V.

What is the continuous collector current rating of the MJE182G?

The MJE182G has a continuous collector current rating of 3A.

What is the minimum DC current gain (hFE) for the MJE182G?

The minimum DC current gain (hFE) for the MJE182G is 50 at 100mA collector current and 1V collector-emitter voltage.

What is the operating temperature range for the MJE182G transistor?

The MJE182G operates within a temperature range of -65°C to 150°C.

What package type is the MJE182G supplied in?

The MJE182G is supplied in a TO-225AA, TO-126-3 package.

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