BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
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195 pcs
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195 pcs | On Request | 1 | On Request | On Request | 94+ | On Request | On Request |
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The MJE182 is an NPN silicon power transistor manufactured by Motorola Semiconductor, designed for applications such as low power audio amplifiers and high-speed switching circuits. It offers a maximum collector-emitter voltage (VCEO) of 80V and a continuous collector current (IC) of 3A.
Key electrical characteristics include a DC current gain (hFE) of 30 minimum at 0.5A and a transition frequency (fT) of 50 MHz minimum at 100mAdc. The transistor can dissipate up to 12.5W of power at 25°C ambient temperature.
This device comes in a SOT-32 package with through-hole termination, making it suitable for various board-mounting applications. It is also noted to have Pb-Free packages available, aligning with environmental considerations.
The MJE182 series is designed for complementary use with PNP transistors, offering flexibility in circuit design. Its robust construction and specified performance parameters make it a reliable choice for power amplification and switching tasks.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MJE182 has a maximum collector-emitter voltage of 80 Vdc.
The MJE182 can handle a continuous collector current of 3.0 Adc.
The MJE182 has a power dissipation of 12.5 W at 25°C ambient temperature.
The operating and storage junction temperature range for the MJE182 is -65 to +150 °C.
The MJE182 transistor is available in a SOT-32 package.
The MJE182 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the MJE182 is 1 Unlimited.