MJE181STU The ON Semiconductor MJE181STU is an NPN power transistor designed for through-hole mounting. It features a 60V collector-emitter breakdown voltage and a 3A continuous collector current.
Mfr Part #:

MJE181STU

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MJE181STU is an NPN power transistor designed for through-hole mounting. It features a 60V collector-emitter breakdown voltage and a 3A continuous collector current.
Total Stock: 1,158 pcs
$ Price Range: $0.99

MJE181STU Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,158 pcs
1158 pcs On Request 1 On Request On Request 04+ On Request On Request

MJE181STU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Current Cutoff
Collector-Base Voltage
Current
Current Gain DC (Nominal)
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage
Frequency
Mounting Type
Operating Temperature
Operating Temperature - Maximum
Power
Power Dissipation (Maximum)
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MJE181STU Description

Short technical summary and product information.

The ON Semiconductor MJE181STU is a single NPN bipolar junction transistor (BJT) suitable for various electronic applications. It is housed in a TO-126 package and designed for through-hole mounting.

 

Key electrical characteristics include a maximum collector current of 3A and a collector-emitter breakdown voltage of 60V. The transistor offers a DC current gain (hFE) of 50 at 100mA and 1V. Its Vce saturation is rated at a maximum of 1.7V at 600mA and 3A. The transition frequency is specified at 50MHz.

 

With a power dissipation rating of 1.5W, the MJE181STU operates within a temperature range of -65°C to 150°C. The component is supplied in tube packaging.

 

This transistor is part of the Discrete Semiconductor Products category, specifically within the Transistors - Bipolar (BJT) - Single subcategory. It is manufactured by ON Semiconductor.

MJE181STU Quick Information

Product Type: NPN Power Transistor
Canonical Name: MJE181STU NPN Power Transistor
Subcategory: NPN

MJE181STU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MJE181STU Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJE181STU Features

  • NPN bipolar junction transistor
  • 60V collector-emitter breakdown voltage
  • 3A continuous collector current
  • 1.5W maximum power dissipation
  • TO-126 package, through-hole mount

MJE181STU Applications

  • Used in power switching circuits
  • Suitable for amplification applications
  • Ideal for motor control modules
  • Applicable in power regulators

MJE181STU FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector current for the MJE181STU?

The maximum continuous collector current for the MJE181STU is 3A.

What is the collector-emitter breakdown voltage of the MJE181STU?

The collector-emitter breakdown voltage for the MJE181STU is 60V.

What is the power dissipation rating of the MJE181STU transistor?

The MJE181STU has a power dissipation rating of 1.5W.

What is the operating temperature range for the MJE181STU?

The MJE181STU can operate in a temperature range from -65°C to 150°C.

What package type is the MJE181STU supplied in?

The MJE181STU is supplied in TO-126 package and tube packaging.

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