MJE181G The MJE181G is an NPN bipolar junction transistor from ON Semiconductor designed for low power audio amplifiers and high-speed switching applications. It features a 60V collector-emitter voltage and 3A continuous collector current.
Mfr Part #:

MJE181G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MJE181G is an NPN bipolar junction transistor from ON Semiconductor designed for low power audio amplifiers and high-speed switching applications. It features a 60V collector-emitter voltage and 3A continuous collector current.
Total Stock: 375 pcs
$ Price Range: $0.99

MJE181G Available from 1 distributor

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Non-Authorised
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375 pcs
375 pcs On Request 1 On Request On Request 13+ On Request On Request

MJE181G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Leakage Current (Maximum @ VBE = 7.0 Vdc, IC = 0)
Leakage Current (Maximum @ VCB = 80 Vdc, IE = 0)
Mounting Type
Operating Temperature
Operating and Storage Junction Temperature Range
Power
Power Dissipation (Maximum @ TC=25 °C)
Power Dissipation (Maximum) @ TA=25°C
Supplier Device Package
Thermal Resistance (Typical)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
Voltage - Maximum
voltage (Maximum @ MJE 171 G, MJE 181 G)
voltage (Maximum @ MJE 172 G, MJE 182 G)
voltage (Minimum @ MJE 171 G, MJE 181 G (IC = 10 mAdc, IB = 0)

MJE181G Description

Short technical summary and product information.

The MJE181G is a complementary silicon power transistor from ON Semiconductor, part of the MJE170/180 series. This NPN transistor is designed for applications requiring low power audio amplification and low current, high-speed switching.

 

Key electrical specifications include a collector-emitter voltage (VCEO) of 60V and a continuous collector current (IC) of 3A. It offers a high DC current gain (hFE) of 50 minimum at 100mA and 1V, and a frequency response up to 50MHz. The saturation voltage (Vce Sat) is a maximum of 1.7V at 600mA and 3A.

 

This device is housed in a TO-126 package, suitable for through-hole mounting. It operates within a junction temperature range of -65°C to 150°C. The transistor has a total power dissipation of 1.5W at 25°C ambient temperature and 12.5W at 25°C case temperature.

 

The MJE181G is Pb-free and RoHS compliant, making it suitable for modern electronic designs.

MJE181G Quick Information

Product Type: NPN Transistor
Series: MJE170/180
Canonical Name: MJE181G NPN Transistor
Subcategory: NPN

MJE181G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MJE181G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJE181G Features

  • NPN silicon power transistor.
  • 60V collector-emitter voltage rating.
  • 3A continuous collector current.
  • High DC current gain.
  • TO-126 package for through-hole mounting.

MJE181G Applications

  • Suitable for low power audio amplifier circuits.
  • Used in high-speed switching applications.
  • Ideal for low voltage, high current switching.
  • Applicable in general-purpose transistor switching.
  • Suitable for low power, high gain amplification.

MJE181G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage for the MJE181G transistor?

The collector-emitter voltage (VCEO) for the MJE181G is 60 Vdc.

What is the continuous collector current rating of the MJE181G?

The MJE181G has a continuous collector current rating of 3 A.

What is the operating temperature range for the MJE181G transistor?

The operating and storage junction temperature range for the MJE181G is -65°C to 150°C.

What package type is the MJE181G supplied in?

The MJE181G is supplied in a TO-126 package.

What is the minimum DC current gain (hFE) for the MJE181G?

The minimum DC current gain (hFE) for the MJE181G is 50 at 100mA collector current and 1V collector-emitter voltage.

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