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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
375 pcs
|
375 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Leakage Current (Maximum @ VBE = 7.0 Vdc, IC = 0) | |
| Leakage Current (Maximum @ VCB = 80 Vdc, IE = 0) | |
| Mounting Type | |
| Operating Temperature | |
| Operating and Storage Junction Temperature Range | |
| Power | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Power Dissipation (Maximum) @ TA=25°C | |
| Supplier Device Package | |
| Thermal Resistance (Typical) | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| Voltage - Maximum | |
| voltage (Maximum @ MJE 171 G, MJE 181 G) | |
| voltage (Maximum @ MJE 172 G, MJE 182 G) | |
| voltage (Minimum @ MJE 171 G, MJE 181 G (IC = 10 mAdc, IB = 0) |
The MJE181G is a complementary silicon power transistor from ON Semiconductor, part of the MJE170/180 series. This NPN transistor is designed for applications requiring low power audio amplification and low current, high-speed switching.
Key electrical specifications include a collector-emitter voltage (VCEO) of 60V and a continuous collector current (IC) of 3A. It offers a high DC current gain (hFE) of 50 minimum at 100mA and 1V, and a frequency response up to 50MHz. The saturation voltage (Vce Sat) is a maximum of 1.7V at 600mA and 3A.
This device is housed in a TO-126 package, suitable for through-hole mounting. It operates within a junction temperature range of -65°C to 150°C. The transistor has a total power dissipation of 1.5W at 25°C ambient temperature and 12.5W at 25°C case temperature.
The MJE181G is Pb-free and RoHS compliant, making it suitable for modern electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the MJE181G is 60 Vdc.
The MJE181G has a continuous collector current rating of 3 A.
The operating and storage junction temperature range for the MJE181G is -65°C to 150°C.
The MJE181G is supplied in a TO-126 package.
The minimum DC current gain (hFE) for the MJE181G is 50 at 100mA collector current and 1V collector-emitter voltage.