| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
24,512 pcs
|
24512 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request | |
|
1,250 pcs
|
1250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The ON Semiconductor MJE181 is a complementary silicon NPN power transistor. It is designed for low power audio amplifier and low current, high speed switching applications. This transistor offers a collector-emitter voltage of 60V and a continuous collector current of 3A.
Key electrical characteristics include a DC current gain (hFE) of 50 minimum at 100mA and 1V, and a Vce saturation of 1.7V maximum at 600mA and 3A. It operates at frequencies up to 50MHz.
The MJE181 has a total power dissipation of 12.5W at 25°C case temperature. It is housed in a TO-225AA, TO-126-3 package and is designed for through-hole mounting.
This device operates within a temperature range of -65°C to 150°C (TJ). It is Pb-free and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (Vceo) for the MJE181 is 60 Vdc.
The MJE181 transistor has a continuous collector current (Ic) of 3 Adc.
The total power dissipation (PD) for the MJE181 at TC = 25°C is 12.5 W.
The operating and storage junction temperature range for the MJE181 is -65°C to +150°C.
The MJE181 is supplied in a TO-225AA, TO-126-3 package.
Yes, the MJE181 is RoHS3 compliant.
The Moisture Sensitivity Level (MSL) for the MJE181 is 1.