MJE180STU The ON Semiconductor MJE180STU is an NPN Bipolar Transistor - BJT in a TO-126-3 package. It offers a 40V collector-emitter voltage and 3A continuous collector current.
Mfr Part #:

MJE180STU

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MJE180STU is an NPN Bipolar Transistor - BJT in a TO-126-3 package. It offers a 40V collector-emitter voltage and 3A continuous collector current.
Total Stock: 533 pcs
$ Price Range: $0.99

MJE180STU Available from 1 distributor

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533 pcs
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MJE180STU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector - Emitter Saturation Voltage
Collector-Base Voltage (VCBO)
Collector-Emitter Voltage (VCEO) Max
Current
DC Current Gain (hFE) (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (VEBO)
Frequency
Gain-Bandwidth Product (fT)
Maximum DC Collector Current
Maximum Operating Temperature
Maximum power dissipation
Minimum Operating Temperature
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MJE180STU Description

Short technical summary and product information.

The ON Semiconductor MJE180STU is a single NPN epitaxial silicon bipolar junction transistor (BJT) designed for various electronic applications. It features a maximum collector-emitter voltage (VCEO) of 40V and a continuous collector current (Ic) of 3A, making it suitable for power switching and amplification tasks.

 

This transistor operates with a minimum DC current gain (hFE) of 50 at 100mA and 1V, and a maximum gain of 250. The collector-emitter saturation voltage (Vce Sat) is 1.7V at 600mA and 3A. With a gain bandwidth product (fT) of 50MHz, it is capable of handling moderate frequency signals.

 

The MJE180STU is housed in a TO-126-3 through-hole package, facilitating easy mounting on printed circuit boards. It has a maximum power dissipation of 1.5W and can operate within a temperature range of -65°C to 150°C.

 

This component is RoHS3 compliant, has an MSL of 1, and is REACH unaffected, indicating adherence to environmental and safety standards.

MJE180STU Quick Information

Product Type: Bipolar Transistor - BJT
Series: Mje180
Canonical Name: MJE180STU NPN Epitaxial Silicon Transistor
Subcategory: Single

MJE180STU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MJE180STU Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJE180STU Features

  • NPN Epitaxial Silicon Bipolar Transistor.
  • 40V Collector-Emitter Voltage (VCEO).
  • 3A Continuous Collector Current (Ic).
  • 50MHz Gain Bandwidth Product (fT).
  • TO-126-3 Through-Hole Package.

MJE180STU Applications

  • Used in high-voltage switching circuits
  • Suitable for power amplification applications
  • Ideal for automotive and industrial electronics
  • Designed for through-hole assembly

MJE180STU FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MJE180STU?

The maximum collector-emitter voltage (VCEO) for the MJE180STU is 40V.

What is the continuous collector current rating of the MJE180STU?

The MJE180STU has a continuous collector current rating of 3A.

What is the operating temperature range for this transistor?

The MJE180STU operates between -65°C and 150°C.

What package type is the MJE180STU supplied in?

The MJE180STU is supplied in a TO-126-3 package.

Is the MJE180STU RoHS compliant?

Yes, the MJE180STU is RoHS3 compliant.

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