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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12,500 pcs
|
12500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Emitter Voltage (Maximum @ MJE 170 G, MJE 180 G) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MJE180G is a bipolar junction transistor (BJT) manufactured by On Semiconductor. It is designed for switching and amplification applications requiring high voltage and current handling. The device features a maximum collector-emitter voltage of 40V and a collector current of 3A, making it suitable for power regulation, motor control, and other high-power circuits.
This transistor is packaged in a TO126 package, which allows for efficient heat dissipation and easy mounting on circuit boards. Its electrical characteristics make it suitable for use in various electronic devices where reliable high-voltage switching is necessary.
The MJE180G is part of a series of transistors designed for high-voltage applications, offering robust performance in industrial and consumer electronics. Proper heat sinking and circuit design considerations should be observed to ensure optimal operation and longevity.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage of the MJE180G is 40V.