MJE18004G The ON Semiconductor MJE18004G is an NPN Bipolar Power Transistor designed for switching power supply applications. It offers a 450V collector-emitter voltage and 5A continuous collector current.
Mfr Part #:

MJE18004G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MJE18004G is an NPN Bipolar Power Transistor designed for switching power supply applications. It offers a 450V collector-emitter voltage and 5A continuous collector current.
Total Stock: 9,620 pcs
$ Price Range: $0.99

MJE18004G Available from 3 distributors

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6,320 pcs
6320 pcs On Request 1 On Request On Request On Request On Request On Request
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2,300 pcs
2300 pcs On Request 1 On Request On Request On Request On Request On Request
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1,000 pcs
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MJE18004G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current - Continuous
Base Current - Peak
Collector Current - Continuous
Collector Current - Peak
Collector-Base Breakdown Voltage
Collector-Emitter Sustaining Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Derate Above 25c (Maximum)
Emitter-Base Voltage
Frequency
Maximum Lead Temperature for Soldering Purposes
Mounting Type
Operating Temperature
Operating and Storage Temperature
Power
RMS Isolation Voltage (Maximum @ Test No. 1 Per Figure 22 A)
RMS Isolation Voltage (Maximum @ Test No. 2 Per Figure 22 b)
RMS Isolation Voltage (Maximum @ Test No. 3 Per Figure 22 c)
Supplier Device Package
Thermal Resistance Junction To Case (Maximum)
Thermal Resistance Junction-to-Ambient
Total Device Dissipation (Maximum @ @ TC = 25 °C)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MJE18004G Description

Short technical summary and product information.

The ON Semiconductor MJE18004G is a switch-mode NPN bipolar power transistor designed for use in 220V line-operated switch-mode power supplies and electronic light ballasts. It features a high and flat DC current gain (hFE) for improved efficiency and fast switching characteristics.

 

Key electrical specifications include a collector-emitter sustaining voltage of 450Vdc, a collector-base breakdown voltage of 1000Vdc, and a continuous collector current of 5Adc. The transistor can handle a peak collector current of 10Adc. It has a maximum power dissipation of 75W at 25°C case temperature and a frequency rating of 13MHz.

 

This device is housed in a TO-220 package, suitable for through-hole mounting. The operating temperature range is -65°C to 150°C. The MJE18004G is Pb-free and RoHS compliant.

MJE18004G Quick Information

Product Type: NPN Bipolar Power Transistor
Series: MJE18004G
Canonical Name: On Semiconductor MJE18004G NPN Bipolar Power Transistor
Subcategory: NPN

MJE18004G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

MJE18004G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJE18004G Features

  • 450V Collector-Emitter Sustaining Voltage
  • 5A Continuous Collector Current
  • 75W Total Device Dissipation
  • NPN Transistor Type
  • TO-220 Package, Through Hole Mount

MJE18004G Applications

  • Suitable for switch-mode power supplies.
  • Used in electronic light ballasts.
  • Ideal for high-voltage switching applications.
  • Applicable in motor control circuits.
  • Suitable for high-current switching devices.

MJE18004G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MJE18004G?

The maximum collector-emitter sustaining voltage is 450 Vdc.

What is the continuous collector current rating?

The continuous collector current is 5.0 Adc.

What is the power dissipation of the MJE18004G?

The total device dissipation is 75 W at 25°C case temperature.

What is the operating temperature range?

The operating and storage temperature range is -65°C to 150°C.

What type of transistor is the MJE18004G?

It is an NPN bipolar transistor.

How is the MJE18004G mounted?

It is a through-hole mounted device in a TO-220 package.

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