MJE18004 The MJE18004 is an NPN bipolar power transistor from ON Semiconductor designed for switch-mode power supply applications. It features a 450V collector-emitter voltage and 5A continuous collector current.
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MJE18004

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MJE18004 is an NPN bipolar power transistor from ON Semiconductor designed for switch-mode power supply applications. It features a 450V collector-emitter voltage and 5A continuous collector current.
Total Stock: 19 pcs
$ Price Range: $0.99

MJE18004 Available from 1 distributor

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MJE18004 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Maximum Lead Temperature for Soldering Purposes
Mounting Type
Operating Temperature
Operating and Storage Temperature
Power
Power Dissipation (Maximum @ TC=25 °C)
Supplier Device Package
Thermal Resistance (Maximum)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
current (Maximum @ Note 1)
voltage (Maximum @ Test No. 2 Per Figure 22 b (for 1 sec, R.H. < 30%, TA = 25 °C)

MJE18004 Description

Short technical summary and product information.

The ON Semiconductor MJE18004 is a switch-mode NPN bipolar power transistor designed for high-efficiency applications such as 220V line-operated switch-mode power supplies and electronic light ballasts. It offers improved efficiency due to low base drive requirements, featuring high and flat DC current gain (hFE) and fast switching characteristics.

 

Key electrical specifications include a collector-emitter sustaining voltage of 450Vdc, a collector-base breakdown voltage of 1000Vdc, and a continuous collector current of 5Adc. The transistor can handle a peak collector current of 10Adc and a continuous base current of 2Adc. Its Vce saturation is a maximum of 750mV at 500mA base current and 2.5A collector current.

 

With a total device dissipation of 75W for the MJE18004 variant at 25°C, this transistor is suitable for power applications. It operates within a temperature range of -65°C to 150°C. The component is housed in a TO-220 package, suitable for through-hole mounting.

 

This device is Pb-Free and RoHS Compliant, making it suitable for modern electronic designs requiring environmental considerations.

MJE18004 Quick Information

Product Type: NPN Bipolar Power Transistor
Series: MJE18004
Canonical Name: MJE18004 NPN Bipolar Power Transistor
Subcategory: Bipolar (BJT) - Single

MJE18004 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

MJE18004 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJE18004 Features

  • 450V collector-emitter sustaining voltage.
  • 5A continuous collector current.
  • 75W total device dissipation.
  • TO-220 package for through-hole mounting.
  • Pb-Free and RoHS Compliant.

MJE18004 Applications

  • Used in high-voltage switching circuits
  • Suitable for power amplification applications
  • Ideal for industrial power supplies
  • Applicable in motor control circuits

MJE18004 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MJE18004?

The maximum collector-emitter sustaining voltage is 450 Vdc.

What is the continuous collector current rating?

The continuous collector current is 5.0 Adc.

What is the power dissipation of the MJE18004?

The total device dissipation is 75 W at 25°C for the MJE18004.

What is the operating temperature range?

The operating and storage temperature range is -65°C to 150°C.

What type of transistor is the MJE18004?

The MJE18004 is an NPN bipolar power transistor.

What package is the MJE18004 supplied in?

The MJE18004 is supplied in a TO-220-3 package suitable for through-hole mounting.

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