MJE172G The MJE172G is a PNP bipolar junction transistor from On Semiconductor. It features an 80V collector-emitter voltage and a 3A continuous collector current, suitable for various switching applications.
Mfr Part #:

MJE172G

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MJE172G is a PNP bipolar junction transistor from On Semiconductor. It features an 80V collector-emitter voltage and a 3A continuous collector current, suitable for various switching applications.
✓ Total Stock: 64,168 pcs
$ Price Range: $0.99

MJE172G Available from 4 distributors

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MJE172G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MJE172G Description

Short technical summary and product information.

The MJE172G is a PNP silicon power transistor manufactured by On Semiconductor. Designed for low power audio amplifier and low current, high speed switching applications, this device offers a collector-emitter voltage of up to 80V and a continuous collector current of 3A.

 

Key electrical characteristics include a maximum Vce saturation of 1.7V at 600mA/3A and a minimum DC current gain (hFE) of 50 at 100mA/1V. The transition frequency is rated at 50MHz. The transistor has a maximum power dissipation of 1.5W at 25°C ambient temperature.

 

Packaged in a TO-126 (TO-225AA, TO-126-3) through-hole package, the MJE172G operates within a junction temperature range of -65°C to 150°C. Its annular construction contributes to low leakage characteristics. The device is Pb-free and RoHS compliant.

 

This transistor is suitable for applications requiring moderate power handling and switching speeds. Its complementary NPN types are available in the MJE180 series.

MJE172G Quick Information

Product Type: Bipolar Junction Transistor
Canonical Name: MJE172G PNP Bipolar Junction Transistor
Subcategory: PNP

MJE172G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

MJE172G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJE172G Features

  • PNP silicon power transistor.
  • 80V collector-emitter voltage rating.
  • 3A continuous collector current.
  • 1.5W maximum power dissipation.
  • TO-126 through-hole package.

MJE172G Applications

  • Used in high-voltage switching circuits
  • Suitable for power amplification applications
  • Ideal for through-hole power devices
  • Designed for high-temperature environments

MJE172G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MJE172G?

The maximum collector-emitter voltage (VCEO) for the MJE172G is 80 Vdc.

What is the continuous collector current rating of the MJE172G?

The MJE172G can handle a continuous collector current (IC) of up to 3 Adc.

What is the maximum power dissipation for the MJE172G?

The maximum power dissipation (PD) for the MJE172G is 1.5 W at an ambient temperature of 25°C.

What is the operating temperature range of the MJE172G?

The MJE172G operates within a junction temperature range of -65°C to 150°C.

What is the minimum DC current gain (hFE) for the MJE172G?

The minimum DC current gain (hFE) for the MJE172G is 50, measured at 100mA collector current and 1V collector-emitter voltage.

What package type is the MJE172G supplied in?

The MJE172G is supplied in a TO-126 package, also referred to as TO-225AA, TO-126-3.

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