| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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19,000 pcs
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19000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MJE170G from ON Semiconductor is a complementary PNP silicon power transistor. It is designed for applications such as low power audio amplifiers and low current, high-speed switching circuits.
Key electrical characteristics include a Collector-Emitter Sustaining Voltage (VCEO(sus)) of 40 Vdc for the MJE170/MJE180 series, a minimum DC Current Gain (hFE) of 30 at 0.5 Adc, and a Current-Gain - Bandwidth Product (fT) of 50 MHz minimum at 100 mAdc. The transistor has a continuous collector current rating of 3 Adc and a peak rating of 6 Adc.
This device is housed in a TO-225AA package, suitable for through-hole mounting. It offers low leakage due to its annular construction. The operating and storage junction temperature range is from -65°C to +150°C.
The MJE170/180 series is available in Pb-Free packages, aligning with environmental standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter sustaining voltage (VCEO(sus)) for the MJE170G is 40 Vdc.
The minimum DC current gain (hFE) is 30 at 0.5 Adc and 12 at 1.5 Adc.
The minimum current-gain - bandwidth product (fT) is 50 MHz at 100 mAdc.
The MJE170G is supplied in a TO-225AA package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.