MJE15031G The MJE15031G is a PNP bipolar junction transistor from On Semiconductor. It offers a 150V collector-emitter voltage and 8A continuous current.
Mfr Part #:

MJE15031G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MJE15031G is a PNP bipolar junction transistor from On Semiconductor. It offers a 150V collector-emitter voltage and 8A continuous current.
Total Stock: 3,600 pcs
$ Price Range: $0.99

MJE15031G Available from 1 distributor

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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3,600 pcs
3600 pcs On Request 1 On Request On Request On Request On Request On Request

MJE15031G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Current - Continuous
Collector-Emitter Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Frequency - Transition
Mounting Type
Operating Temperature
Pb-Free
Power
Supplier Device Package
Total Device Dissipation
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MJE15031G Description

Short technical summary and product information.

The MJE15031G is a PNP silicon power transistor designed for use as high-frequency drivers in audio amplifiers. It features a 150V collector-emitter voltage and a continuous collector current of 8A, with a power dissipation of 50W at 25°C case temperature.

 

This transistor is housed in a TO-220 package, suitable for through-hole mounting. It offers a high current gain-bandwidth product and is designed for efficient operation in audio amplifier circuits. The operating temperature range is -65°C to 150°C.

 

Key electrical characteristics include a DC current gain (hFE) of 20 minimum at 4A and 2V, and a Vce saturation of 500mV maximum at 100mA and 1A. The transition frequency is 30MHz.

 

The device is Pb-free and RoHS compliant, making it suitable for modern electronic designs. Its complementary NPN counterpart is the MJE15028G.

MJE15031G Quick Information

Product Type: PNP Power Transistor
Canonical Name: MJE15031G PNP Power Transistor
Subcategory: PNP

MJE15031G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MJE15031G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJE15031G Features

  • PNP silicon power transistor
  • 150V collector-emitter voltage
  • 8A continuous collector current
  • 50W power dissipation
  • TO-220 package for through-hole mounting

MJE15031G Applications

  • Suitable for high-frequency audio amplifier drivers.
  • Used in power switching and motor control circuits.
  • Ideal for high-current switching applications.
  • Applicable in high-voltage power regulation circuits.

MJE15031G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MJE15031G?

The maximum collector-emitter voltage is 150 Vdc.

What is the continuous collector current rating?

The continuous collector current is 8 A.

What is the power dissipation of the MJE15031G?

The total device dissipation is 50 W at 25°C case temperature.

What is the operating temperature range?

The operating temperature range is -65°C to 150°C.

What is the DC current gain (hFE) at 4A and 2V?

The minimum DC current gain (hFE) is 20 at 4A and 2V.

What is the Vce saturation voltage?

The Vce saturation is 500mV maximum at 100mA and 1A.

What is the transition frequency?

The transition frequency is 30 MHz.

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