MJE15029G The MJE15029G is a PNP bipolar junction transistor from ON Semiconductor designed for high-frequency audio amplifier drivers. It comes in a TO-220 package.
Mfr Part #:

MJE15029G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MJE15029G is a PNP bipolar junction transistor from ON Semiconductor designed for high-frequency audio amplifier drivers. It comes in a TO-220 package.
Total Stock: 392 pcs
$ Price Range: $0.99

MJE15029G Available from 2 distributors

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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262 pcs
262 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
130 pcs
130 pcs On Request 1 On Request On Request On Request On Request On Request

MJE15029G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
DC Current Gain Linearity
Frequency
Mounting Type
Operating Temperature
Operating and Storage Junction Temperature Range
Power
Power Dissipation (Maximum @ TC=25 °C)
Power Dissipation (Maximum) @ TA=25°C
Supplier Device Package
Thermal Resistance (Maximum @ Junction to case)
Thermal Resistance (Maximum @ Junction-to-Ambient)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
Voltage - Maximum
current (Maximum @ VBE = 5.0 Vdc, IC = 0)
current (Maximum @ VCB = 120 Vdc, IE = 0)
current (Maximum @ VCE = 120 Vdc, IB = 0)
gain (Minimum @ IC = 0.1 Adc, VCE = 2.0 Vdc)
gain (Minimum @ IC = 2.0 Adc, VCE = 2.0 Vdc)
gain (Minimum @ IC = 3.0 Adc, VCE = 2.0 Vdc)
gain (Minimum @ IC = 4.0 Adc, VCE = 2.0 Vdc)
voltage (Maximum @ Ib = 100 mA, Ic = 1 A)
voltage (Maximum @ MJE 15030 G, MJE 15031 G)
voltage (Minimum @ IC = 10 mAdc, IB = 0)

MJE15029G Description

Short technical summary and product information.

The MJE15029G is a PNP silicon power transistor manufactured by ON Semiconductor. It is designed for use as high-frequency drivers in audio amplifiers. This device features a TO-220 compact package and offers a high current gain-bandwidth product.

 

Key electrical characteristics include a maximum collector-emitter voltage of 120V and a continuous collector current of 8A. The transistor can handle a peak collector current of 16A and a base current of 2A. It has a maximum power dissipation of 50W at a case temperature of 25°C.

 

The operating and storage junction temperature range is from -65°C to 150°C. The thermal resistance from junction to case is 2.5°C/W, and from junction to ambient is 62.5°C/W. The MJE15029G is RoHS compliant and suitable for through-hole mounting.

 

This transistor is well-suited for applications requiring robust amplification and high-frequency response in audio systems.

MJE15029G Quick Information

Product Type: PNP Transistor
Series: MJE15029G
Canonical Name: MJE15029G PNP Power Transistor
Subcategory: Single

MJE15029G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MJE15029G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJE15029G Features

  • PNP silicon power transistor.
  • Designed for high-frequency audio drivers.
  • 120V collector-emitter voltage.
  • 8A continuous collector current.
  • TO-220 package for through-hole mounting.

MJE15029G Applications

  • Used in high-voltage switching circuits
  • Suitable for power amplification applications
  • Ideal for high-current power supplies
  • Applicable in motor control circuits

MJE15029G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MJE15029G?

The maximum collector-emitter voltage for the MJE15029G is 120 Vdc.

What is the continuous collector current rating of the MJE15029G?

The MJE15029G has a continuous collector current rating of 8 Adc.

What is the power dissipation of the MJE15029G at 25°C case temperature?

The total device dissipation for the MJE15029G at a case temperature of 25°C is 50 W.

What is the operating temperature range for the MJE15029G transistor?

The operating and storage junction temperature range for the MJE15029G is -65°C to +150°C.

What package type is the MJE15029G supplied in?

The MJE15029G is supplied in a TO-220-3 package.

How is the MJE15029G mounted?

The MJE15029G is mounted using the through-hole method.

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