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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
441 pcs
|
441 pcs | On Request | 1 | On Request | On Request | 03+02+ | On Request | On Request | |
|
43 pcs
|
43 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current - Continuous | |
| Collector Current - Continuous | |
| Collector Current - Peak | |
| Collector Cutoff Current (Maximum @ VCB = 120 Vdc, IE = 0) | |
| Collector Cutoff Current (Maximum @ VCE = 120 Vdc, IB = 0) | |
| Collector-Emitter Sustaining Voltage | |
| Collector-Emitter Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain (hFE) (Minimum @ IC = 0.1 Adc, VCE = 2.0 Vdc) | |
| DC Current Gain (hFE) (Minimum @ IC = 2.0 Adc, VCE = 2.0 Vdc) | |
| DC Current Gain (hFE) (Minimum @ IC = 3.0 Adc, VCE = 2.0 Vdc) | |
| DC Current Gain (hFE) (Minimum @ IC = 4.0 Adc, VCE = 2.0 Vdc) | |
| DC Current Gain (hFE) @ Ic, Vce | |
| DC Current Gain Linearity (Typical @ VCE From 2.0 V to 20 V, IC From 0.1 A to 3 A) | |
| Emitter Cutoff Current | |
| Emitter-Base Voltage | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Operating and Storage Junction Temperature Range | |
| Power | |
| Supplier Device Package | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Total Device Dissipation (Maximum @ @ TC = 25 °C) | |
| Total Device Dissipation (Maximum @ Ta = 25 °C) | |
| Transistor Type | |
| Vce Saturation | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MJE15029 from On Semiconductor is a PNP silicon power transistor designed for use as high-frequency drivers in audio amplifier applications. This device is housed in a standard TO-220 package, facilitating through-hole mounting.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 120 Vdc and a continuous collector current (IC) of 8 Adc. It offers a power dissipation of 50W at 25°C case temperature and a frequency response up to 30 MHz. The transistor exhibits a DC current gain (hFE) of at least 20 at 4A and 2V, with a Vce saturation of 500mV at 100mA and 1A.
The operating and storage junction temperature range is from -65°C to 150°C. Thermal characteristics include a junction-to-case thermal resistance of 2.5°C/W. The device is Pb-free and RoHS compliant, making it suitable for modern electronic designs.
This transistor is well-suited for applications requiring high current gain and frequency response in audio amplification stages and other general-purpose high-power switching and amplification circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MJE15029 is 120 Vdc.
The MJE15029 has a continuous collector current (IC) rating of 8 Adc.
The total device dissipation for the MJE15029 at 25°C case temperature is 50W.
The operating and storage junction temperature range for the MJE15029 is -65°C to 150°C.
The MJE15029 is supplied in a TO-220-3 package.
Yes, the MJE15029 is RoHS3 compliant.