MJE13009

The MJE13009 is a preferred device in the SWITCHMODE/C0116 Series of NPN Silicon Power Transistors from ON Semiconductor. It is engineered for high-voltage, high-speed power switching inductive circuits where fall time is critical.

This transistor is particularly suited for 115V and 220V SWITCHMODE applications, including Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers, and Deflection circuits. Key electrical specifications include a Collector-Emitter Voltage (VCEO(sus)) of 400V, a continuous Collector Current (IC) of 12A, and a peak Collector Current (ICM) of 24A. It also features a DC Current Gain (hFE) of 8 minimum at 5A/5V and a Vce Saturation of 3V maximum at 3A/12A.

The MJE13009 operates over a wide temperature range from -65°C to 150°C. It is available in a TO-220-3 package, suitable for through-hole mounting. The device has a power dissipation rating of 2W at 25°C case temperature and 100W at 25°C ambient temperature.

Additional features include a 700V blocking capability and a frequency rating of 4MHz. The thermal resistance from junction to case is 1.25°C/W, and junction to ambient is 62.5°C/W.