MJE13007G The MJE13007G is an NPN Bipolar Power Transistor from On Semiconductor designed for high-voltage, high-speed switching applications. It features a 400V collector-emitter voltage and 8A continuous collector current.
Mfr Part #:

MJE13007G

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MJE13007G is an NPN Bipolar Power Transistor from On Semiconductor designed for high-voltage, high-speed switching applications. It features a 400V collector-emitter voltage and 8A continuous collector current.
✓ Total Stock: 13,100 pcs
$ Price Range: $0.99

MJE13007G Available from 4 distributors

✓ Authorised
✓ Non-Authorised

MJE13007G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MJE13007G Description

Short technical summary and product information.

The MJE13007G is a switch-mode NPN bipolar power transistor manufactured by On Semiconductor. It is specifically designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. This device is particularly suited for 115V and 220V switch-mode applications, including switching regulators, inverters, motor controls, solenoid/relay drivers, and deflection circuits.

 

Key electrical specifications include a collector-emitter sustaining voltage (VCEO) of 400Vdc, a continuous collector current (IC) of 8Adc, and a peak collector current (ICM) of 16Adc. The transistor offers a continuous base current (IB) of 4Adc and a peak base current (IBM) of 8Adc. Its total power dissipation (PD) is rated at 80W at 25°C.

 

The MJE13007G is housed in a standard TO-220 package, suitable for through-hole mounting. The operating and storage temperature range is from -65°C to 150°C. Thermal characteristics include a junction-to-case thermal resistance (RϱJC) of 1.56°C/W and a junction-to-ambient thermal resistance (RϱJA) of 62.5°C/W.

 

This device is Pb-Free and RoHS Compliant. It is complementary to the MJE5850 through MJE5852 series.

MJE13007G Quick Information

Product Type: Bipolar Transistor
Canonical Name: MJE13007G Switch-mode NPN Bipolar Power Transistor
Subcategory: Single

MJE13007G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

MJE13007G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJE13007G Features

  • 400V collector-emitter sustaining voltage.
  • 8A continuous collector current.
  • 80W total power dissipation.
  • TO-220 package for through-hole mounting.
  • Designed for high-speed switching.

MJE13007G Applications

  • Suitable for switching regulators.
  • Used in inverter applications.
  • Ideal for motor controls.
  • Applicable for relay drivers.
  • Used in deflection circuits.

MJE13007G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter sustaining voltage of the MJE13007G?

The collector-emitter sustaining voltage (VCEO) is 400 Vdc.

What is the continuous collector current rating for the MJE13007G?

The continuous collector current (IC) is 8.0 Adc.

What is the power dissipation of the MJE13007G transistor?

The total device dissipation (PD) is 80 W at 25°C.

What is the operating temperature range for the MJE13007G?

The operating and storage temperature range is -65°C to 150°C.

What package type is the MJE13007G supplied in?

The MJE13007G is supplied in a TO-220-3 package.

Is the MJE13007G RoHS compliant?

Yes, the MJE13007G is RoHS3 Compliant.

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