SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
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354 pcs
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354 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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354 pcs
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354 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
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The MJE13007 is a switch-mode NPN bipolar power transistor manufactured by WST. It is designed for high voltage, high-speed power switching inductive circuits where fall time is critical. This transistor is particularly suited for 115V and 220V switch mode applications, including switching regulators, inverters, motor controls, solenoid/relay drivers, and deflection circuits.
Key electrical specifications include a collector-emitter breakdown voltage (VCEO) of 400V, a maximum collector current (Ic) of 8A, and a maximum power dissipation (Pd) of 80W. The DC current gain (hFE) is a minimum of 5 at 5A and 5V. It operates within a temperature range of -65°C to 150°C.
The MJE13007 is housed in a standard TO-220AB package and is designed for through-hole mounting. Its construction utilizes silicon as the element material. The transistor has a transition frequency (fT) of 14MHz, indicating its suitability for high-frequency switching operations.
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| 1+ | $0.42 | $0.42 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (VCEO) of the MJE13007 is 400V.
The maximum collector current (Ic) for the MJE13007 is 8A.
The maximum power dissipation (Pd) for the MJE13007 is 80W.
The MJE13007 operates within a temperature range of -65°C to 150°C.
The MJE13007 is supplied in a TO-220AB package.
The MJE13007 is designed for through-hole mounting.
