MJE13005G

The MJE13005G from ON Semiconductor is an NPN Silicon Power Transistor engineered for demanding high-voltage and high-speed power switching applications. Its design is particularly suited for inductive circuits where fall time is critical, making it ideal for 115 and 220 V SWITCHMODE applications such as switching regulators, inverters, motor controls, solenoid/relay drivers, and deflection circuits.

Key electrical specifications include a Collector-Emitter Sustaining Voltage (VCEO(sus)) of 400 Vdc and a continuous Collector Current (IC) of 4 Adc. The device also offers a peak Collector Current (ICM) of 8 Adc and a continuous Base Current (IB) of 2 Adc. With a total device dissipation of 75 W at 25°C case temperature, it is built for robust performance. The operating and storage junction temperature range is from -65°C to +150°C.

Packaged in a standard TO-220-3 configuration, the MJE13005G is designed for through-hole mounting. Its thermal characteristics include a junction-to-case thermal resistance of 1.67 °C/W, facilitating efficient heat dissipation. The transistor type is NPN, with a DC Current Gain (hFE) of 8 minimum at 2A collector current and 5V collector-emitter voltage. The Vce Saturation voltage is a maximum of 1V at 1A base current and 4A collector current. It operates at frequencies up to 4MHz.

This device is Pb-Free and RoHS Compliant, aligning with modern environmental standards. Its robust specifications make it a reliable choice for various power switching designs.