MJE13003 The MJE13003 is an NPN silicon power transistor from ON Semiconductor designed for high-voltage, high-speed switching applications. It features a 400V collector-emitter voltage and 1.5A continuous collector current.
Mfr Part #:

MJE13003

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MJE13003 is an NPN silicon power transistor from ON Semiconductor designed for high-voltage, high-speed switching applications. It features a 400V collector-emitter voltage and 1.5A continuous collector current.
Total Stock: 3,003 pcs
$ Price Range: $0.99

MJE13003 Available from 2 distributors

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Non-Authorised
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3,000 pcs
3000 pcs On Request 1 On Request On Request On Request On Request On Request
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3 pcs
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MJE13003 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Maximum Load Temperature for Soldering Purposes
Mounting Type
Operating Temperature
Operating and Storage Junction Temperature Range
Power
Power Dissipation (Maximum @ TC=25 °C)
Power Dissipation (Maximum) @ TA=25°C
Supplier Device Package
Supplier Package
Thermal Resistance (Maximum @ RθJA)
Thermal Resistance (Maximum @ RθJC)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
Voltage - Maximum
voltage (Maximum @ VCEV)
voltage (Maximum @ VEBO)

MJE13003 Description

Short technical summary and product information.

The MJE13003 is an NPN silicon power transistor manufactured by ON Semiconductor, part of the SWITCHMODE/C0116 series. It is specifically designed for high-voltage, high-speed power switching in inductive circuits where fall time is critical.

 

Key electrical specifications include a continuous collector current of 1.5A and a peak collector current of 3A. The collector-emitter voltage (VCEO(sus)) is rated at 400V, with a higher VCEV rating of 700V. The device offers a DC current gain (hFE) of 8 (min) at 500mA and 2V, and a Vce saturation of 3V (max) at 500mA and 1.5A. Its operating frequency reaches up to 10MHz.

 

With a total power dissipation of 1.4W at 25°C ambient temperature and 40W at 25°C case temperature, the MJE13003 is suitable for demanding applications. It operates within a junction temperature range of -65°C to 150°C.

 

The transistor is housed in a TO-126 package and supports through-hole mounting. Its thermal resistance from junction-to-case is 3.12°C/W, and junction-to-ambient is 89°C/W. The datasheet indicates Pb-free package availability.

MJE13003 Quick Information

Product Type: NPN Transistor
Series: SWITCHMODE/C0116
Canonical Name: MJE13003 NPN Silicon Power Transistor
Subcategory: Single

MJE13003 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MJE13003 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJE13003 Features

  • NPN silicon power transistor for switching.
  • 400V collector-emitter voltage rating.
  • 1.5A continuous collector current.
  • TO-126 package, through-hole mounting.
  • Designed for high-voltage inductive circuits.

MJE13003 Applications

  • Suitable for switching regulators.
  • Used in inverters and motor controls.
  • Ideal for solenoid and relay drivers.
  • Applicable in deflection circuits.

MJE13003 FAQs

4 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MJE13003?

The MJE13003 has a VCEO(sus) of 400V and a VCEV of 700V.

What is the continuous collector current rating of the MJE13003 transistor?

The MJE13003 can handle a continuous collector current of 1.5A.

What type of package is the MJE13003 transistor supplied in?

The MJE13003 is supplied in a TO-126 package.

What is the operating temperature range for the MJE13003?

The operating and storage junction temperature range for the MJE13003 is -65°C to 150°C.

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