BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
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3,775 pcs
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3775 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MJD6039T4G from ON Semiconductor is an NPN Darlington transistor designed for various electronic applications. It offers a collector-emitter voltage (VCEO) of up to 80V and a continuous collector current of 4A, making it suitable for power switching and amplification tasks.
This transistor has a maximum power dissipation of 20W and operates within a temperature range of -65°C to +150°C. It features a high DC current gain (HFE) of at least 500. The device is housed in a TO-252 (DPAK) surface-mount package, facilitating integration into compact circuit designs.
Key electrical specifications include an emitter-base voltage (VEBO) of 5V and a collector-base voltage (VCBO) of 80V. The single NPN configuration and SMD mounting style are standard for many power transistor applications.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO Max) for the MJD6039T4G is 80V.
The maximum continuous collector current for the MJD6039T4G is 4A.
The power dissipation rating for the MJD6039T4G is 20W.
The operating temperature range for the MJD6039T4G is -65°C to +150°C.
The MJD6039T4G is supplied in a TO-252-3 (DPAK) package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is Level 1.