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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,020 pcs
|
6020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,259 pcs
|
1259 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Current (Maximum) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Lead Style | |
| Lead Temperature for Soldering | |
| Mounting Type | |
| Operating Temperature | |
| Operating and Storage Junction Temperature Range | |
| Power | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Power Dissipation (Maximum) | |
| Power Dissipation (Maximum) @ TA=25°C | |
| Supplier Device Package | |
| Thermal Resistance (Maximum @ RθJA) | |
| Thermal Resistance (Maximum @ RθJC) | |
| Transistor Type | |
| Unclamped inductive load energy | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| Voltage - Maximum | |
| current (Maximum @ ICEO (VCE = 250 Vdc, IB = 0) | |
| current (Maximum @ ICES (VCE = 350 Vdc, VBE = 0) | |
| current (Maximum @ ICM) | |
| voltage (Maximum @ VEB) |
The MJD5731T4G is a high-voltage PNP silicon power transistor manufactured by ON Semiconductor. Designed for applications such as line-operated audio output amplifiers and SWITCHMODE power supply drivers, this transistor offers a collector-emitter breakdown voltage of 350V and a continuous collector current of 1A.
Key electrical characteristics include a maximum power dissipation of 1.56W at 25°C ambient temperature and a DC current gain (hFE) of 30 minimum at 300mA collector current and 10V collector-emitter voltage. The Vce saturation voltage is a maximum of 1V at 200mA base current and 1A collector current.
This device is supplied in a DPAK (TO-252-3) surface mount package, making it suitable for space-constrained designs. The operating temperature range is from -55°C to +150°C. It is RoHS compliant and comes in a tape and reel package quantity of 2500 units.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage for the MJD5731T4G is 350V.
The MJD5731T4G transistor has a continuous collector current of 1A.
The maximum power dissipation for the MJD5731T4G is 1.56W.
The operating and storage junction temperature range for the MJD5731T4G is -55°C to +150°C.
The MJD5731T4G is supplied in a DPAK (TO-252-3, DPak (2 Leads + Tab), SC-63) surface mount package.
The MJD5731T4G is RoHS3 compliant.