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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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116,020 pcs
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116020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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17,339 pcs
|
17339 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
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2,645 pcs
|
2645 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2,224 pcs
|
2224 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,232 pcs
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1232 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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867 pcs
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867 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current | |
| Collector - Emitter Saturation Voltage | |
| Collector Current - Continuous | |
| Collector Current - Peak | |
| Collector-Base Voltage | |
| Collector-Emitter Sustaining Voltage | |
| Collector-Emitter Voltage | |
| Current | |
| DC Current Gain (hFE) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Voltage | |
| Frequency | |
| Gain-Bandwidth Product | |
| Lead Style | |
| Lead Temperature for Soldering Purpose | |
| Mounting Type | |
| Operating Temperature | |
| Operating and Storage Junction Temperature Range | |
| Power | |
| Supplier Device Package | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Total Power Dissipation (Maximum @ Tc=25 °C) | |
| Total power dissipation (Maximum @ Ta=25 °C) | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The ON Semiconductor MJD50T4G is a high voltage NPN silicon power transistor. It is designed for applications such as line-operated audio output amplifiers, switchmode supply drivers, and other switching circuits.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 400V and a continuous collector current (IC) of 1A. The device can handle a peak collector current (ICM) of 2A and a base current (IB) of 0.6A. Its power dissipation is rated at 15W at 25°C case temperature and 1.56W at 25°C ambient temperature.
The transistor operates within a junction temperature range of -65°C to +150°C. It features a typical DC current gain (hFE) of 30 at 300mA collector current and 10V collector-emitter voltage. The collector-emitter saturation voltage (Vce(sat)) is a maximum of 1V at 200mA base current and 1A collector current. The gain bandwidth product (fT) is 10MHz.
Packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package, the MJD50T4G is suitable for automated assembly processes. It is RoHS compliant and designed for reliable performance in demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MJD50T4G is 400 Vdc.
The MJD50T4G has a continuous collector current rating of 1 Adc.
The power dissipation is 15 W at 25°C case temperature and 1.56 W at 25°C ambient temperature.
The operating and storage junction temperature range for the MJD50T4G is -65°C to +150°C.
The MJD50T4G is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.
Yes, the MJD50T4G is RoHS3 compliant.