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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,901 pcs
|
4901 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Current - Collector Cutoff | |
| DC Current Gain (hFE) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MJD50RLG from On Semiconductor is a single NPN bipolar junction transistor (BJT) suitable for various electronic applications. It offers a high collector-emitter breakdown voltage of 400V and can handle a continuous collector current of up to 1A. The transistor has a maximum power dissipation of 1.56W and a transition frequency of 10MHz.
This device is designed for surface mounting and comes in a TO-252-3, DPAK (SC-63) package. The operating temperature range is from -65°C to 150°C (TJ). Key electrical characteristics include a minimum DC current gain (hFE) of 30 at 300mA and 10V, and a Vce saturation of 1V maximum at 200mA and 1A.
The MJD50RLG is specified with RoHS3 compliance and an MSL of 1 Unlimited. Its compact DPAK package makes it suitable for space-constrained designs where reliable NPN transistor performance is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 400V.
It comes in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package.
-65°C to 150°C.
Yes, it is RoHS3 compliant.