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MJD50G The MJD50G is an NPN power transistor from On Semiconductor designed for switching applications. It features a 400V collector-emitter voltage and a 1A continuous collector current.
Mfr Part #:

MJD50G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MJD50G is an NPN power transistor from On Semiconductor designed for switching applications. It features a 400V collector-emitter voltage and a 1A continuous collector current.
✓ Total Stock: 100 pcs
$ Price Range: $0.99

MJD50G Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Hybrid Electronics ✓
Non-Authorised Inventory information
100 pcs
On Request
100 pcs On Request 1 On Request On Request 1110 On Request On Request
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MJD50G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Lead Style
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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MJD50G Description

Short technical summary and product information.

The MJD50G is a high voltage NPN power transistor manufactured by On Semiconductor. It is designed for applications such as line operated audio output amplifiers and switchmode supply drivers.

 

Key electrical specifications include a maximum collector-emitter voltage of 400V and a continuous collector current of 1A. The transistor also offers a peak collector current of 2A and a base current of 0.6A. Its DC current gain (hFE) is a minimum of 30 at 300mA and 10V, with a Vce saturation of 1V maximum at 200mA and 1A.

 

This device operates within a junction temperature range of -65°C to 150°C. It is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, suitable for surface mounting.

 

The MJD50G is Pb-free and RoHS compliant, making it suitable for modern electronic designs requiring environmental considerations.

MJD50G Quick Information

Product Type: NPN Transistor
Canonical Name: MJD50G NPN Power Transistor
Subcategory: Single

MJD50G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

MJD50G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJD50G Features

  • 400V collector-emitter voltage rating.
  • 1A continuous collector current.
  • Surface mount DPAK package.
  • Wide operating temperature range.
  • Pb-free and RoHS compliant.

MJD50G Applications

  • Suitable for line operated audio output amplifiers.
  • Used in switchmode power supply drivers.
  • Ideal for switching applications requiring high voltage.
  • Applicable in automotive and industrial control circuits.
  • Suitable for surface mount power transistor designs.

MJD50G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MJD50G?

The MJD50G has a maximum collector-emitter voltage of 400 Vdc.

What is the continuous collector current rating of the MJD50G transistor?

The MJD50G transistor has a continuous collector current rating of 1 Adc.

What type of package is the MJD50G supplied in?

The MJD50G is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.

What is the operating temperature range for the MJD50G?

The MJD50G operates within a temperature range of -65°C to 150°C (TJ).

Is the MJD50G RoHS compliant?

Yes, the MJD50G is RoHS3 Compliant.

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