MJD47T4G

The MJD47T4G is a bipolar junction transistor (BJT) manufactured by On Semiconductor. It features an NPN transistor type with a maximum collector-emitter voltage of 250V and a collector current of 1A. The device is designed for high-voltage switching and amplification applications. Its package type is DPAK, a surface-mount package that facilitates compact and efficient circuit layouts. The transistor has a collector-base voltage of up to 500V and a collector-emitter voltage of 400V, making it suitable for power regulation and switching circuits. It operates within a temperature range of -65°C to +150°C and has a total power dissipation of 15W. The device is RoHS3 compliant and Pb-Free, suitable for environmentally conscious manufacturing. Its thermal resistance junction-to-case is 8.33°C/W, and junction-to-ambient is 80°C/W. The device can withstand an ESD of 3B V under the Human Body Model. It is mounted on a surface with a lead temperature for soldering of 260°C.