MJD45H11T4G The ON Semiconductor MJD45H11T4G is a PNP bipolar junction transistor designed for general purpose power and switching applications. It features a maximum collector-emitter voltage of 80V and a continuous collector current of 8A.
Mfr Part #:

MJD45H11T4G

Available from 6 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MJD45H11T4G is a PNP bipolar junction transistor designed for general purpose power and switching applications. It features a maximum collector-emitter voltage of 80V and a continuous collector current of 8A.
Total Stock: 249,824 pcs
$ Price Range: $0.99

MJD45H11T4G Available from 6 distributors

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MJD45H11T4G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
ESD Human Body Model
ESD Machine Model
Frequency
Halogen Free
Mounting Type
Operating Temperature
Operating and Storage Junction Temperature Range
Pb-Free
Power
Power Dissipation (Maximum @ TC=25 °C)
Power Dissipation (Minimum @ @ TA = 25 °C)
Power Dissipation Derate Above +25°C
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
voltage (Minimum @ IC = 30 mA, IB = 0)

MJD45H11T4G Description

Short technical summary and product information.

The ON Semiconductor MJD45H11T4G is a PNP power transistor designed for general purpose power and switching applications, such as output or driver stages in switching regulators, converters, and power amplifiers.

 

This transistor offers a maximum collector-emitter voltage (VCEO) of 80V and a continuous collector current (IC) of 8A, with a peak collector current (ICM) of 16A. It has a total power dissipation of 20W at a case temperature of 25°C, derating to 0.16W/°C. The operating and storage junction temperature range is from -55°C to +150°C.

 

Packaged in a DPAK (TO-252-3, DPak) surface mount package, the MJD45H11T4G is suitable for applications requiring compact and efficient power handling. It features low collector-emitter saturation voltage and fast switching speeds, making it a versatile component for various electronic designs.

 

This device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant, aligning with environmental standards for modern electronic manufacturing.

MJD45H11T4G Quick Information

Product Type: PNP Transistor
Canonical Name: MJD45H11T4G PNP Power Transistor
Subcategory: Single

MJD45H11T4G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MJD45H11T4G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJD45H11T4G Features

  • PNP bipolar junction transistor type.
  • 80V collector-emitter voltage rating.
  • 8A continuous collector current.
  • DPAK surface mount package.
  • Pb-Free and RoHS Compliant.

MJD45H11T4G Applications

  • Used in switching regulators.
  • Suitable for power converters.
  • Applied in power amplifiers.
  • General purpose power switching.

MJD45H11T4G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MJD45H11T4G?

The maximum collector-emitter voltage (VCEO) for the MJD45H11T4G is 80 Vdc.

What is the continuous collector current rating?

The continuous collector current (IC) rating for this transistor is 8 Adc.

What type of package does the MJD45H11T4G come in?

The MJD45H11T4G is available in a DPAK package, suitable for surface mounting.

What is the operating temperature range?

The operating and storage junction temperature range is -55°C to +150°C.

Is the MJD45H11T4G RoHS compliant?

Yes, the MJD45H11T4G is RoHS3 Compliant.

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