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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
126,020 pcs
|
126020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
100,000 pcs
|
100000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
18,792 pcs
|
18792 pcs | On Request | 1 | On Request | On Request | 1717+ | On Request | On Request | |
|
3,500 pcs
|
3500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,407 pcs
|
1407 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
105 pcs
|
105 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| ESD Human Body Model | |
| ESD Machine Model | |
| Frequency | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Operating and Storage Junction Temperature Range | |
| Pb-Free | |
| Power | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Power Dissipation (Minimum @ @ TA = 25 °C) | |
| Power Dissipation Derate Above +25°C | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| voltage (Minimum @ IC = 30 mA, IB = 0) |
The ON Semiconductor MJD45H11T4G is a PNP power transistor designed for general purpose power and switching applications, such as output or driver stages in switching regulators, converters, and power amplifiers.
This transistor offers a maximum collector-emitter voltage (VCEO) of 80V and a continuous collector current (IC) of 8A, with a peak collector current (ICM) of 16A. It has a total power dissipation of 20W at a case temperature of 25°C, derating to 0.16W/°C. The operating and storage junction temperature range is from -55°C to +150°C.
Packaged in a DPAK (TO-252-3, DPak) surface mount package, the MJD45H11T4G is suitable for applications requiring compact and efficient power handling. It features low collector-emitter saturation voltage and fast switching speeds, making it a versatile component for various electronic designs.
This device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant, aligning with environmental standards for modern electronic manufacturing.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MJD45H11T4G is 80 Vdc.
The continuous collector current (IC) rating for this transistor is 8 Adc.
The MJD45H11T4G is available in a DPAK package, suitable for surface mounting.
The operating and storage junction temperature range is -55°C to +150°C.
Yes, the MJD45H11T4G is RoHS3 Compliant.