MJD45H11G The MJD45H11G is a PNP bipolar junction transistor from On Semiconductor. It features a maximum collector-emitter voltage of 80V and a continuous collector current of 8A.
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MJD45H11G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MJD45H11G is a PNP bipolar junction transistor from On Semiconductor. It features a maximum collector-emitter voltage of 80V and a continuous collector current of 8A.
Total Stock: 5,354 pcs
$ Price Range: $0.99

MJD45H11G Available from 3 distributors

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3,720 pcs
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1,543 pcs
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91 pcs
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MJD45H11G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Cutoff Current
Collector-Emitter Sustaining Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
Power Dissipation (Maximum @ TC=25 °C)
Power Dissipation (Maximum) @ TA=25°C
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MJD45H11G Description

Short technical summary and product information.

The MJD45H11G is a PNP bipolar junction transistor designed for general purpose power and switching applications. It offers a maximum collector-emitter voltage of 80V and a continuous collector current of 8A, with a peak current capability of 16A.

 

This transistor features a transition frequency of 90MHz and a maximum power dissipation of 1.75W at 25°C ambient temperature. The Vce saturation is a maximum of 1V at 400mA collector current and 8A collector current. The DC current gain (hFE) is a minimum of 40 at 4A collector current and 1V collector-emitter voltage.

 

Packaged in a DPAK surface mount package (TO-252-3), the MJD45H11G is suitable for applications requiring space-saving solutions. It operates within a junction temperature range of -55°C to +150°C.

 

The device is RoHS compliant, REACH unaffected, and has a Moisture Sensitivity Level (MSL) of 1. It is also Pb-Free and Halogen Free/BFR Free.

MJD45H11G Quick Information

Product Type: Bipolar Junction Transistor
Canonical Name: MJD45H11G PNP Bipolar Junction Transistor
Subcategory: PNP

MJD45H11G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

MJD45H11G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJD45H11G Features

  • PNP bipolar junction transistor.
  • 80V collector-emitter voltage rating.
  • 8A continuous collector current.
  • 1.75W maximum power dissipation.
  • DPAK surface mount package.

MJD45H11G Applications

  • General purpose power switching.
  • Output driver stages.
  • Switching regulators.
  • Power amplifiers.

MJD45H11G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MJD45H11G?

The maximum collector-emitter voltage is 80 Vdc.

What is the continuous collector current rating?

The continuous collector current is 8 Adc.

What is the operating temperature range?

The operating and storage junction temperature range is -55°C to +150°C.

What is the RoHS status of the MJD45H11G?

The MJD45H11G is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1 Unlimited.

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