MJD45H11-1G The ON Semiconductor MJD45H11-1G is a PNP bipolar transistor designed for general purpose power and switching applications. It offers an 80V collector-emitter voltage and 8A continuous current.
Mfr Part #:

MJD45H11-1G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MJD45H11-1G is a PNP bipolar transistor designed for general purpose power and switching applications. It offers an 80V collector-emitter voltage and 8A continuous current.
Total Stock: 6,118 pcs
$ Price Range: $0.99

MJD45H11-1G Available from 3 distributors

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1,383 pcs
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MJD45H11-1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Current - Peak
Collector-Emitter Sustaining Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage
Frequency
Gain-Bandwidth Product
Halogen Free
Lead Style
Mounting Type
Operating Temperature
Pb-Free
Power
Power Dissipation (Maximum @ TC=25 °C)
Power Dissipation (Maximum) @ TA=25°C
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MJD45H11-1G Description

Short technical summary and product information.

The ON Semiconductor MJD45H11-1G is a PNP bipolar transistor suitable for general purpose power and switching applications, including output or driver stages in switching regulators, converters, and power amplifiers. It features a maximum collector-emitter voltage of 80V and a continuous collector current of 8A.

 

This transistor operates within a junction temperature range of -55°C to +150°C. It has a gain bandwidth product of 90MHz and a low collector-emitter saturation voltage of 1V at 400mA collector current and 8A collector current. The device is housed in a TO-251-3 Short Leads, IPak, TO-251AA package, designed for through-hole mounting.

 

Key electrical characteristics include a DC current gain (hFE) of 40 minimum at 4A and 1V, and a peak collector current of 16A. The total power dissipation is rated at 20W at 25°C case temperature and 1.75W at 25°C ambient temperature.

 

The MJD45H11-1G is Pb-free and Halogen-free, compliant with RoHS standards. Its complementary pair design simplifies circuit configurations.

MJD45H11-1G Quick Information

Product Type: Bipolar Transistor
Series: MJD45H11
Canonical Name: On Semiconductor MJD45H11-1G PNP Bipolar Transistor
Subcategory: Transistors

MJD45H11-1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MJD45H11-1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJD45H11-1G Features

  • PNP bipolar transistor for power applications.
  • 80V collector-emitter voltage rating.
  • 8A continuous collector current.
  • 90MHz gain bandwidth product.
  • TO-251AA IPak through-hole package.

MJD45H11-1G Applications

  • Used in switching regulators.
  • Suitable for power converters.
  • Applicable for power amplifiers.
  • Driver stages in power circuits.

MJD45H11-1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MJD45H11-1G?

The maximum collector-emitter voltage (VCEO) for the MJD45H11-1G is 80 Vdc.

What is the continuous collector current rating of the MJD45H11-1G?

The MJD45H11-1G has a continuous collector current rating of 8 A.

What is the operating temperature range for this transistor?

The operating and storage junction temperature range for the MJD45H11-1G is -55°C to +150°C.

What package type is the MJD45H11-1G supplied in?

The MJD45H11-1G is supplied in a TO-251-3 Short Leads, IPak, TO-251AA package.

Is the MJD45H11-1G RoHS compliant?

Yes, the MJD45H11-1G is RoHS3 compliant.

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