MJD44H11RLG The ON Semiconductor MJD44H11RLG is an NPN bipolar transistor designed for general purpose power and switching applications. It features an 80V collector-emitter voltage and 8A continuous collector current.
Mfr Part #:

MJD44H11RLG

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MJD44H11RLG is an NPN bipolar transistor designed for general purpose power and switching applications. It features an 80V collector-emitter voltage and 8A continuous collector current.
Total Stock: 112,290 pcs
$ Price Range: $0.99

MJD44H11RLG Available from 2 distributors

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
110,820 pcs
110820 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,470 pcs
1470 pcs On Request 1 On Request On Request On Request On Request On Request

MJD44H11RLG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Current - Peak
Collector-Emitter Sustaining Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage
Frequency
Halogen Free
Mounting Type
Operating Temperature
Pb-Free
Power
Power Dissipation Total (Maximum @ TA=25 °C)
Supplier Device Package
Temperature Junction Storage
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MJD44H11RLG Description

Short technical summary and product information.

The ON Semiconductor MJD44H11RLG is a silicon power transistor designed for general purpose power and switching applications, such as output or driver stages in switching regulators, converters, and power amplifiers.

 

This NPN transistor offers a maximum collector-emitter voltage of 80V and a continuous collector current of 8A. It has a maximum power dissipation of 20W at TC=25°C and 1.75W at TA=25°C. The device operates within a junction temperature range of -55°C to +150°C.

 

Packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package, the MJD44H11RLG is suitable for applications requiring compact and efficient power handling. Its complementary pair design simplifies circuit configurations.

 

The transistor features a gain bandwidth product of 85MHz and a Vce saturation of 1V at 400mA, 8A. It is Pb-Free and Halogen Free, compliant with RoHS3 standards.

MJD44H11RLG Quick Information

Product Type: Bipolar Transistor
Canonical Name: MJD44H11RLG NPN Power Transistor
Subcategory: Transistors

MJD44H11RLG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MJD44H11RLG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJD44H11RLG Features

  • NPN bipolar transistor for power applications.
  • 80V collector-emitter voltage rating.
  • 8A continuous collector current.
  • 20W maximum power dissipation.
  • Surface mount DPAK package.

MJD44H11RLG Applications

  • Suitable for switching regulators.
  • Used in power converter circuits.
  • Ideal for power amplifier stages.
  • General purpose power switching.

MJD44H11RLG FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MJD44H11RLG?

The maximum collector-emitter voltage is 80 Vdc.

What is the continuous collector current rating?

The continuous collector current is 8 Adc.

What is the maximum power dissipation?

The maximum power dissipation is 20 W at TC=25°C.

What is the operating temperature range?

The operating and storage junction temperature range is -55°C to +150°C.

What package type is the MJD44H11RLG supplied in?

It is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package.

Is the MJD44H11RLG RoHS compliant?

Yes, it is RoHS3 Compliant.

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