MJD44H11 The MJD44H11 is an NPN high power bipolar transistor from ON Semiconductor. It features a collector-emitter voltage of 80V and a collector current of 8A.
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MJD44H11

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MJD44H11 is an NPN high power bipolar transistor from ON Semiconductor. It features a collector-emitter voltage of 80V and a collector current of 8A.
✓ Total Stock: 6,000 pcs
$ Price Range: $0.99

MJD44H11 Available from 2 distributors

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✓ Non-Authorised
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5,000 pcs
5000 pcs On Request 1 On Request On Request On Request On Request On Request
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1,000 pcs
1000 pcs On Request 1 On Request On Request 18+ On Request On Request

MJD44H11 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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MJD44H11 Description

Short technical summary and product information.

The MJD44H11 is an NPN high power bipolar transistor manufactured by ON Semiconductor. It is designed for applications requiring high thermal power dissipation capability and high energy efficiency.

 

Key electrical specifications include a collector-emitter voltage (VCEO) of 80V and a continuous collector current (IC) of 8A. The transistor also offers a high peak collector current (ICM) of 16A for single pulses up to 1ms. Its DC current gain (hFE) is a minimum of 60 at VCE = 1V and IC = 2A at 25°C.

 

This transistor is housed in a power DPAK, TO-252 (SOT428C) surface-mounted device (SMD) plastic package. It is suitable for various applications such as power management, load switching, linear mode voltage regulation, constant current drive backlighting, motor drives, and relay replacement.

 

Thermal characteristics include a junction-to-mounting base thermal resistance of 6.25 K/W and a junction-to-ambient thermal resistance of 72 K/W when mounted on an FR4 PCB. The maximum junction temperature is 150°C.

MJD44H11 Quick Information

Product Type: NPN Bipolar Transistor
Canonical Name: MJD44H11 NPN high power bipolar transistor
Subcategory: NPN

MJD44H11 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MJD44H11 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJD44H11 Features

  • 80V collector-emitter voltage rating.
  • 8A continuous collector current.
  • High thermal power dissipation capability.
  • DPAK surface-mount package.
  • NPN high power bipolar transistor.

MJD44H11 Applications

  • Used in power management circuits.
  • Suitable for load switch applications.
  • Applicable for linear voltage regulators.
  • Ideal for motor drive circuits.
  • Can be used as a relay replacement.

MJD44H11 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MJD44H11?

The maximum collector-emitter voltage (VCEO) for the MJD44H11 is 80V.

What is the continuous collector current rating of the MJD44H11?

The MJD44H11 has a continuous collector current (IC) rating of 8A.

What is the package type for the MJD44H11 transistor?

The MJD44H11 is supplied in a DPAK (TO-252, SOT428C) surface-mounted plastic package.

What is the DC current gain (hFE) of the MJD44H11?

The DC current gain (hFE) is a minimum of 60 when measured at VCE = 1V and IC = 2A at 25°C.

What is the maximum junction temperature for this transistor?

The maximum junction temperature (Tj) for the MJD44H11 is 150°C.

What is the thermal resistance from junction to ambient for the MJD44H11?

The thermal resistance from junction to ambient (Rth(j-a)) is 72 K/W when the device is mounted on an FR4 PCB.

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