| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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The MJD44H11 is an NPN high power bipolar transistor manufactured by ON Semiconductor. It is designed for applications requiring high thermal power dissipation capability and high energy efficiency.
Key electrical specifications include a collector-emitter voltage (VCEO) of 80V and a continuous collector current (IC) of 8A. The transistor also offers a high peak collector current (ICM) of 16A for single pulses up to 1ms. Its DC current gain (hFE) is a minimum of 60 at VCE = 1V and IC = 2A at 25°C.
This transistor is housed in a power DPAK, TO-252 (SOT428C) surface-mounted device (SMD) plastic package. It is suitable for various applications such as power management, load switching, linear mode voltage regulation, constant current drive backlighting, motor drives, and relay replacement.
Thermal characteristics include a junction-to-mounting base thermal resistance of 6.25 K/W and a junction-to-ambient thermal resistance of 72 K/W when mounted on an FR4 PCB. The maximum junction temperature is 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MJD44H11 is 80V.
The MJD44H11 has a continuous collector current (IC) rating of 8A.
The MJD44H11 is supplied in a DPAK (TO-252, SOT428C) surface-mounted plastic package.
The DC current gain (hFE) is a minimum of 60 when measured at VCE = 1V and IC = 2A at 25°C.
The maximum junction temperature (Tj) for the MJD44H11 is 150°C.
The thermal resistance from junction to ambient (Rth(j-a)) is 72 K/W when the device is mounted on an FR4 PCB.