| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
960 pcs
|
960 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MJD42CT4G is a PNP bipolar junction transistor (BJT) designed for general purpose amplifier and low-speed switching applications. Manufactured by On Semiconductor, this device offers a maximum collector-emitter voltage of 100V and a continuous collector current rating of 6A.
Key electrical characteristics include a maximum power dissipation of 20W at 25°C case temperature and 1.75W at 25°C ambient temperature. The transistor operates within a junction temperature range of -65°C to +150°C. It is electrically similar to the popular TIP41 and TIP42 series.
The MJD42CT4G is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, designed for surface mounting. This package type is suitable for applications requiring compact designs and efficient heat dissipation.
This transistor is RoHS 3 compliant and Pb-Free, indicating adherence to environmental regulations. It is also rated for Moisture Sensitivity Level 1 (MSL 1).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MJD42CT4G is 100 Vdc.
The MJD42CT4G has a continuous collector current (IC) rating of 6 Adc.
The MJD42CT4G is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.
The operating and storage junction temperature range for the MJD42CT4G is -65°C to +150°C.
Yes, the MJD42CT4G is RoHS 3 compliant.