MJD42C1G The ON Semiconductor MJD42C1G is a PNP bipolar junction transistor designed for general purpose amplifier and switching applications. It offers a 100V collector-emitter voltage and 6A continuous current.
Mfr Part #:

MJD42C1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MJD42C1G is a PNP bipolar junction transistor designed for general purpose amplifier and switching applications. It offers a 100V collector-emitter voltage and 6A continuous current.
Total Stock: 7,790 pcs
$ Price Range: $0.99

MJD42C1G Available from 1 distributor

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MJD42C1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current
Collector Current - Peak
Collector-Emitter Sustaining Voltage
Current
Current - Continuous
Current Continuous (Maximum)
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Gain DC Current (Minimum @ IC = 0.3 Adc, VCE = 4 Vdc)
Gain DC Current (Minimum @ IC = 3 A, VCE = 4 V)
Gain DC Current (Minimum @ IC = 3 Adc, VCE = 4 Vdc)
Lead Style
Mounting Type
Operating Temperature
Operating Voltage
Operating Voltage (Maximum)
Power
Power Dissipation (Maximum @ TC=25 °C)
Power Dissipation (Maximum) @ TA=25°C
Power Dissipation (Unspecified condition)
Supplier Device Package
Transistor Type
Vce Saturation
Vce Saturation (Max) @ Ib, Ic
Voltage

MJD42C1G Description

Short technical summary and product information.

The MJD42C1G from ON Semiconductor is a PNP power transistor suitable for general purpose amplifier and low-speed switching applications. It features a maximum collector-emitter voltage of 100V and a continuous collector current rating of 6A.

 

This device is designed for through-hole mounting and comes in an I-PAK (TO-251AA) package. It has a maximum power dissipation of 1.75W at 25°C ambient temperature when surface mounted on recommended minimum pads. The operating junction temperature range is from -65°C to 150°C.

 

Key electrical characteristics include a DC current gain (hFE) of at least 15 at 3A and 4V, and a Vce saturation of 1.5V maximum at 6A and 600mA base current. The transistor operates up to a frequency of 3MHz.

 

It is electrically similar to the TIP41 and TIP42 series. The epoxy meets UL 94 V-0 standards. This component is Pb-free and RoHS compliant.

MJD42C1G Quick Information

Product Type: PNP Power Transistor
Canonical Name: MJD42C1G PNP Power Transistor
Subcategory: Single PNP

MJD42C1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MJD42C1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJD42C1G Features

  • PNP bipolar junction transistor.
  • 100V collector-emitter voltage rating.
  • 6A continuous collector current.
  • Through hole mounting in I-PAK package.
  • RoHS3 compliant.

MJD42C1G Applications

  • General purpose amplifier applications.
  • Low speed switching applications.
  • Power supply circuits.
  • Motor control circuits.

MJD42C1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MJD42C1G?

The maximum collector-emitter voltage is 100Vdc.

What is the continuous collector current rating?

The continuous collector current rating is 6Adc.

What is the operating temperature range?

The operating and storage junction temperature range is -65°C to 150°C.

How is the MJD42C1G mounted?

The MJD42C1G is a through-hole mounted device.

What package type is the MJD42C1G supplied in?

It is supplied in an I-PAK package, specifically TO-251-3 Short Leads, IPak, TO-251AA.

What is the DC current gain (hFE) at 3A?

The DC current gain (hFE) is a minimum of 15 at 3A collector current and 4V collector-emitter voltage.

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