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MJD41CT4G The MJD41CT4G is an NPN power transistor from On Semiconductor designed for general purpose amplifier and switching applications. It features a 100V collector-emitter voltage and 6A continuous collector current.
Mfr Part #:

MJD41CT4G

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MJD41CT4G is an NPN power transistor from On Semiconductor designed for general purpose amplifier and switching applications. It features a 100V collector-emitter voltage and 6A continuous collector current.
✓ Total Stock: 17,238 pcs
$ Price Range: $0.46

MJD41CT4G Available from 5 distributors

✓ Authorised
✓ Non-Authorised
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

MJD41CT4G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Lead Style
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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MJD41CT4G Description

Short technical summary and product information.

The MJD41CT4G is a silicon NPN power transistor manufactured by On Semiconductor. It is designed for general purpose amplifier and low-speed switching applications. This transistor offers a collector-emitter voltage of 100V and a continuous collector current of 6A.

 

Key electrical characteristics include a maximum Vce saturation of 1.5V at 600mA base current and 6A collector current, and a DC current gain (hFE) of at least 15 at 3A collector current and 4V Vce. The transistor operates at frequencies up to 3MHz.

 

The MJD41CT4G is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package, making it suitable for space-constrained applications. It has an operating temperature range of -65°C to 150°C.

 

This device is Pb-free and RoHS compliant, suitable for various electronic designs requiring reliable power transistor performance.

MJD41CT4G Quick Information

Product Type: NPN Power Transistor
Series: MJD41CT4G
Canonical Name: MJD41CT4G NPN Power Transistor
Subcategory: BJT

MJD41CT4G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MJD41CT4G Estimated Pricing

Qty Low High
1+ $0.46 $0.46

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJD41CT4G Features

  • 100V collector-emitter voltage rating.
  • 6A continuous collector current capability.
  • NPN bipolar junction transistor.
  • TO-252 DPAK surface mount package.
  • Wide -65°C to 150°C operating temperature.

MJD41CT4G Applications

  • General purpose amplifier circuits.
  • Low speed switching applications.
  • Power supply regulation circuits.
  • Motor control applications.

MJD41CT4G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MJD41CT4G?

The maximum collector-emitter voltage for the MJD41CT4G is 100 Vdc.

What is the continuous collector current rating of the MJD41CT4G?

The MJD41CT4G has a continuous collector current rating of 6 Adc.

What is the operating temperature range for the MJD41CT4G?

The operating and storage junction temperature range for the MJD41CT4G is -65°C to 150°C.

What package type is the MJD41CT4G supplied in?

The MJD41CT4G is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.

Is the MJD41CT4G RoHS compliant?

Yes, the MJD41CT4G is RoHS3 Compliant.

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