MJD350T4G The ON Semiconductor MJD350T4G is a PNP bipolar junction transistor designed for switching applications. It offers a 300V collector-emitter voltage and 0.5A continuous collector current.
Mfr Part #:

MJD350T4G

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MJD350T4G is a PNP bipolar junction transistor designed for switching applications. It offers a 300V collector-emitter voltage and 0.5A continuous collector current.
Total Stock: 78,541 pcs
$ Price Range: $0.99

MJD350T4G Available from 5 distributors

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MJD350T4G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Operating Temperature
Operating Temperature (Tj,Tstg)
Power
Power Dissipation (Maximum @ TC=25 °C)
Power Dissipation (Maximum)
Supplier Device Package
Thermal Resistance - Junction to Case
Transistor Type
Voltage
current (Maximum @ Continuous)
current (Maximum @ ICM)
voltage (Maximum @ VCB)
voltage (Maximum @ VCBO)
voltage (Maximum @ VCEO Max)
voltage (Maximum @ VEB)
voltage (Maximum @ VEBO)

MJD350T4G Description

Short technical summary and product information.

The ON Semiconductor MJD350T4G is a PNP bipolar junction transistor (BJT) designed for high voltage power applications. It is suitable for use in switchmode power supply drivers and other switching circuits.

 

Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 300V and a continuous collector current (IC) of 0.5A. The device can handle a peak collector current (ICM) of 0.75A and has a maximum power dissipation of 15W at 25°C case temperature. The DC current gain (hFE) is a minimum of 30 at 50mA collector current and 10V collector-emitter voltage.

 

This transistor features a DPAK (TO-252-3) surface mount package, making it suitable for automated assembly processes. The operating temperature range is from -65°C to 150°C (TJ). The device is RoHS3 compliant, Pb-free, and Halogen-free.

 

Designed for surface mount applications, the MJD350T4G offers lead forming for compatibility with standard pick-and-place equipment. Its robust construction and electrical characteristics make it a reliable choice for various power switching applications.

MJD350T4G Quick Information

Product Type: Bipolar Transistor
Series: MJD350
Canonical Name: MJD350T4G PNP Power Transistor
Subcategory: BJT

MJD350T4G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

MJD350T4G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJD350T4G Features

  • PNP bipolar junction transistor.
  • 300V collector-emitter voltage rating.
  • 0.5A continuous collector current.
  • 15W maximum power dissipation.
  • DPAK surface mount package.

MJD350T4G Applications

  • Used in power switching circuits
  • Suitable for motor control applications
  • Ideal for audio amplification devices
  • Power regulation and control

MJD350T4G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MJD350T4G?

The maximum collector-emitter voltage (VCEO) for the MJD350T4G is 300V.

What is the continuous collector current rating of the MJD350T4G?

The MJD350T4G has a continuous collector current (IC) rating of 0.5A.

What is the maximum power dissipation for the MJD350T4G?

The maximum power dissipation for the MJD350T4G is 15W.

What is the operating temperature range of the MJD350T4G?

The operating temperature range for the MJD350T4G is -65°C to 150°C.

What package type is the MJD350T4G supplied in?

The MJD350T4G is supplied in a DPAK (TO-252-3) surface mount package.

Is the MJD350T4G RoHS compliant?

Yes, the MJD350T4G is RoHS3 compliant.

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