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46 pcs
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46 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MJD350 is a PNP bipolar junction transistor (BJT) from Blue Rocket, designed for various electronic applications. This component is housed in a TO-252 package, suitable for surface-mount designs.
Key electrical characteristics include a maximum collector current (Ic Max) of 500mA and a collector-emitter breakdown voltage (Vceo) of 300V. The transistor offers a typical DC current gain (Hfe) of 30 at 50mA and 10V. Its maximum power dissipation is rated at 1.56W, and it can operate at temperatures up to 150°C.
The MJD350 is identified by its PNP type and is supplied in a TO-252 package. Its specifications make it suitable for general-purpose amplification and switching applications where its voltage and current ratings are appropriate. The operating temperature range ensures reliability in various environmental conditions.
This transistor is part of the Bipolar Transistors - BJT category. Its TO-252 package facilitates integration into compact circuit designs. The component's specifications are derived from manufacturer data, providing essential parameters for design engineers.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.42 | $0.42 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MJD350 is a PNP transistor.
The MJD350 has a maximum collector current of 500 mA.
The MJD350 has a collector-emitter breakdown voltage of 300 V.
The MJD350 is supplied in a TO-252 package.
The MJD350 can operate at temperatures up to 150°C.