MJD350-13 The Diodes Incorporated MJD350-13 is a 300V PNP bipolar junction transistor. It features a continuous collector current of 0.5A and is housed in a TO-252 package.
Mfr Part #:

MJD350-13

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
The Diodes Incorporated MJD350-13 is a 300V PNP bipolar junction transistor. It features a continuous collector current of 0.5A and is housed in a TO-252 package.
Total Stock: 32,762 pcs
$ Price Range: $0.99

MJD350-13 Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
28,520 pcs
28520 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
4,242 pcs
4242 pcs On Request 1 On Request On Request 16+ On Request On Request

MJD350-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Case
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Halogen Free
Mounting Type
Operating Temperature
Power
Power Dissipation (Maximum @ TA=25 °C, Note 5)
Power Dissipation (Maximum @ TC=25 °C)
Quantity Per Reel
Reel Size
Supplier Device Package
Tape Width
Thermal Resistance (Typical @ Junction to Ambient Air)
Thermal Resistance (Typical @ Junction-to-Case)
Transistor Type
Voltage
current (Maximum @ Peak Pulse)

MJD350-13 Description

Short technical summary and product information.

The Diodes Incorporated MJD350-13 is a PNP bipolar junction transistor designed for high voltage applications. It offers a breakdown voltage (BVCEO) exceeding -300V and a continuous collector current (IC) of -0.5A, with a peak pulse current (ICM) of -0.75A.

 

This transistor is suitable for power switching and amplification applications. It is qualified to AEC-Q101 standards for high reliability. The device is supplied in a TO-252 (DPAK) surface-mount package.

 

Key electrical characteristics include a DC current gain (hFE) of 30 at 50mA and 10V. The operating temperature range is -55°C to +150°C. The transistor has a power dissipation rating of 15W at TC = +25°C and 1.56W at TA = +25°C when mounted on a recommended FR-4 PCB.

 

The MJD350-13 is also RoHS3 compliant, REACH unaffected, and features a Moisture Sensitivity Level (MSL) of 1. It is a totally lead-free and halogen-free device.

MJD350-13 Quick Information

Product Type: PNP High Voltage Transistor
Canonical Name: MJD350-13 PNP High Voltage Transistor
Subcategory: Bipolar (BJT) - Single

MJD350-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Totally Lead-Free

MJD350-13 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJD350-13 Features

  • 300V breakdown voltage rating.
  • 0.5A continuous collector current.
  • Suitable for power switching applications.
  • AEC-Q101 qualified for reliability.
  • TO-252 surface-mount package.

MJD350-13 Applications

  • Used in high-voltage switching circuits
  • Suitable for amplification in electronic devices
  • Ideal for space-constrained applications
  • Applicable in power regulation circuits

MJD350-13 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MJD350-13?

-300V

What is the continuous collector current rating?

-0.5A

What is the operating temperature range?

-55°C ~ 150°C

What package type is the MJD350-13 supplied in?

TO-252-3, DPak (2 Leads + Tab), SC-63

Is the MJD350-13 RoHS compliant?

RoHS3 Compliant

What is the Moisture Sensitivity Level (MSL) for this transistor?

1 Unlimited

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