SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,500 pcs
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2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,150 pcs
|
2150 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The MJD32CT4 is a PNP bipolar junction transistor (BJT) manufactured by On Semiconductor. This component is designed for general-purpose applications requiring a robust transistor with a breakdown voltage of up to 100V and a continuous collector current capability of 3A. It offers a maximum power dissipation of 15W, making it suitable for various power switching and amplification tasks.
The transistor is housed in a surface-mount DPAK (TO-252-3) package, facilitating integration into compact PCB designs. Key electrical characteristics include a low saturation voltage of 1.2V at 3A collector current and a minimum DC current gain (hFE) of 10 at 3A and 4V. The operating junction temperature can reach up to 150°C, ensuring reliable performance under demanding thermal conditions.
With its specified electrical parameters and surface-mount packaging, the MJD32CT4 is a versatile component for engineers designing power supplies, motor control circuits, and other electronic systems where a reliable PNP transistor is needed.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.54 | $2.54 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum operating junction temperature for the MJD32CT4 is 150°C.
The MJD32CT4 has a collector-emitter breakdown voltage of 100V.
The MJD32CT4 can handle a maximum collector current of 3A.
The MJD32CT4 is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.
The MJD32CT4 is designed for surface mounting.
