MJD32CQ-13 The Diodes Incorporated MJD32CQ-13 is a PNP Bipolar Junction Transistor (BJT) designed for automotive applications. It offers a 100V collector-emitter breakdown voltage and a 3A continuous collector current.
Mfr Part #:

MJD32CQ-13

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
The Diodes Incorporated MJD32CQ-13 is a PNP Bipolar Junction Transistor (BJT) designed for automotive applications. It offers a 100V collector-emitter breakdown voltage and a 3A continuous collector current.
Total Stock: 6,995 pcs
$ Price Range: $0.99

MJD32CQ-13 Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
6,995 pcs
6995 pcs On Request 1 On Request On Request 17+ On Request On Request

MJD32CQ-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Current Cutoff
Collector-Base Voltage
Continuous Base Current
Current
Current Collector Continuous (Maximum)
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage
Frequency
Frequency Transition (Nominal)
Halogen Free
Mounting Type
Operating Temperature
Peak Pulse Collector Current
Power
Power Dissipation (Maximum) @ TA=25°C
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
Voltage Collector Emitter Breakdown (Maximum)

MJD32CQ-13 Description

Short technical summary and product information.

The MJD32CQ-13 from Diodes Incorporated is a high-voltage PNP Bipolar Junction Transistor (BJT) suitable for automotive applications. It features a maximum collector-emitter breakdown voltage (BVCEO) of 100V and a continuous collector current (IC) of 3A. The peak pulse collector current (ICM) is rated at 5A.

 

This transistor is designed for power switching or amplification applications. It comes in a TO-252 (DPAK) surface mount package, making it suitable for compact designs. The operating temperature range is specified from -55°C to 150°C (TJ).

 

The MJD32CQ-13 is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities, meeting stringent automotive requirements. It is also RoHS 3 compliant and considered a "Green" device, being halogen and antimony free.

MJD32CQ-13 Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: MJD32CQ-13 PNP High Voltage Transistor
Subcategory: Single

MJD32CQ-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free

MJD32CQ-13 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJD32CQ-13 Features

  • 100V collector-emitter breakdown voltage.
  • 3A continuous collector current.
  • TO-252 surface mount package.
  • Designed for automotive applications.
  • Halogen and antimony free "Green" device.

MJD32CQ-13 Applications

  • Used in high-voltage switching circuits
  • Suitable for power amplification applications
  • Ideal for compact electronic designs
  • Applicable in automotive and industrial electronics

MJD32CQ-13 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MJD32CQ-13?

The maximum collector-emitter voltage (VCEO) for the MJD32CQ-13 is 100V.

What is the continuous collector current rating of the MJD32CQ-13?

The MJD32CQ-13 has a continuous collector current (IC) rating of 3A.

What type of package is the MJD32CQ-13 in?

The MJD32CQ-13 is supplied in a TO-252 (DPAK) package.

What is the operating temperature range for the MJD32CQ-13?

The operating temperature range for the MJD32CQ-13 is -55°C to 150°C (TJ).

Is the MJD32CQ-13 RoHS compliant?

Yes, the MJD32CQ-13 is RoHS 3 compliant.

What is the Moisture Sensitivity Level (MSL) for the MJD32CQ-13?

The Moisture Sensitivity Level (MSL) for the MJD32CQ-13 is Level 1.

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